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首页> 外文期刊>International Journal of Quantum Chemistry >Photoluminescence properties of BaMoO4 amorphous thin films
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Photoluminescence properties of BaMoO4 amorphous thin films

机译：BaMoO4非晶薄膜的光致发光特性

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摘要

BaMoO4 amorphous and crystalline thin films were prepared from polymeric precursors. The BaMoO4 was deposited onto Si wafers by means of the spinning technique. The structure and optical properties of the resulting films were characterized by FTIR reflectance spectra, X-ray diffraction (XRD), atomic force microscopy (AFM) and optical reflectance, The bond Mo-O present in BaMoO4 was confirmed by FTIR reflectance spectra. XRD characterization showed that thin films heat-treated at 600 and 200 degrees C presented the scheelite-type crystalline phase and amorphous, respectively. AFM analyses showed a considerable variation in surface morphology by comparing samples heat-treated at 200 and 600 degrees C. The reflectivity spectra showed two hands. positioned at 3.38 and 4.37eV that were attributed to the excitonic state of Ba2- and electronic transitions within MoO42-, respectively. The optical band gaps of BaMoO4 were 3.38 and 2.19 eV, for crystalline (600 degrees C.2 h) and amorphous (200 degrees C.8 h) films, respectively. The room-temperature luminescence spectra revealed an intense single-emission hand in the visible region. The PL intensity of these materials was increased upon heat-treatment. The excellent optical properties observed for BaMoO4 amorphous thin films Suggested that this material is a highly promising candidate for photoluminescent applications. (c) 2005 Elsevier Inc. All rights reserved.
机译：由聚合物前体制备BaMoO4非晶和晶体薄膜。借助于旋转技术将BaMoO 4沉积在Si晶片上。通过FTIR反射光谱，X射线衍射（XRD），原子力显微镜（AFM）和光学反射来表征所得膜的结构和光学性质。通过FTIR反射光谱确认BaMoO 4中存在的键Mo-O。 XRD表征表明，在600和200℃下热处理的薄膜分别呈现白钨矿型结晶相和非晶态。通过比较在200和600摄氏度下热处理的样品，原子力显微镜（AFM）分析显示出表面形态有相当大的变化。反射光谱显示出两只手。定位在3.38和4.37eV，分别归因于Ba2-的激子态和MoO42-内的电子跃迁。对于结晶膜（600摄氏度2小时）和非晶膜（200摄氏度8小时），BaMoO4的光学带隙分别为3.38和2.19 eV。室温发光光谱在可见光区域显示出强烈的单发射手。这些材料的PL强度在热处理时增加。 BaMoO4非晶薄膜具有出色的光学性能，表明该材料是光致发光应用的极有前途的候选材料。 （c）2005 Elsevier Inc.保留所有权利。

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