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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Reduced Pressure CVD Growth of Ge and Ge_(1_x)Sn_x Alloys
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Reduced Pressure CVD Growth of Ge and Ge_(1_x)Sn_x Alloys

机译：Ge和Ge_（1_x）Sn_x合金的减压CVD生长

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摘要

The epitaxial growth of Ge and GeSn alloys on Si(100) by Reduced Pressure Chemical Vapor Deposition is discussed. Particular emphasis is placed on the growth kinetics in the temperature window between 375°C and 475°C. Using Ge_2Hg precursor and H_2 carrier gas a low activation energy of 0.7 eV was found for the Ge growth which further decreases to 0.5 eV for N_2 carrier gas. Thin Ge layers with high crystalline quality are aimed which may be used as buffers for the epitaxial growth of GeSn layers. Furthermore, GeSn alloys with up to 10 at.% Sn are synthesized on Si(100) at growth temperatures of 375°C employing Ge_2Hg and SnCL) precursors. All Ge and GeSn layers exhibit high crystalline quality as revealed by X-ray reciprocal space mapping and are nearly fully strain relaxed.
机译：讨论了通过减压化学气相沉积在Si（100）上外延生长Ge和GeSn合金。特别强调在375°C至475°C的温度范围内的生长动力学。使用Ge_2Hg前驱物和H_2载气，发现Ge生长的活化能低至0.7 eV，而对于N_2载气，活化能进一步降低至0.5 eV。目标是具有高结晶质量的薄Ge层，可用作GeSn层外延生长的缓冲层。此外，采用Ge_2Hg和SnCL）前驱体，在375°C的生长温度下，在Si（100）上合成了Sn含量高达10 at。％的GeSn合金。 X射线倒易空间图显示，所有的Ge和GeSn层均显示出高结晶质量，并且几乎完全消除了应变。

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