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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Formation of Bismuth Nanocrystals in Bi_2O_3 Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications
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Formation of Bismuth Nanocrystals in Bi_2O_3 Thin Films Grown at 300 K by Pulsed Laser Deposition for Thermoelectric Applications

机译：热电应用脉冲激光沉积在300 K生长的Bi_2O_3薄膜中形成铋纳米晶体

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摘要

Bismuth nanocrystals were embedded in amorphous Bi_2O_3 thin films grown under a nitrogen atmosphere at room temperature using pulsed laser deposition. As-grown Bi_2O_3-Bi thin films showed a high electrical conductivity of approximately 769 S/cm at 320 K, and the samples annealed in two steps at 200 and 300°C consisted of amorphous Bi_2O_3, bismuth nanocrystals in the crystallized β-Bi_2O_3 phase. The mixture phase of the bismuth nanocrystals and β-Bi_2O_3 enhanced the thermoelectric properties at room temperature. Samples annealed in two steps at 200 and 300°C showed an electrical conductivity of 833 S/cm, a Seebeck coefficient of-110 μ V/K, a power factor of about 1.05 × 10~(-3) W/K~2m. Formation of the bismuth nanocrystals in Bi_2O_3 thin films at low temperature made thermoelectric applications possible.
机译：铋纳米晶体被埋入非晶态Bi_2O_3薄膜中，该薄膜在氮气气氛下，室温下使用脉冲激光沉积法生长。成膜的Bi_2O_3-Bi薄膜在320 K下显示出约769 S / cm的高电导率，并且在200和300°C下分两步退火的样品由非晶态Bi_2O_3，结晶的β-Bi_2O_3相的铋纳米晶体组成。铋纳米晶体和β-Bi_2O_3的混合相在室温下增强了热电性能。分两步在200和300°C下退火的样品的电导率为833 S / cm，塞贝克系数为-110μV / K，功率因数约为1.05×10〜（-3）W / K〜2m 。 Bi_2O_3薄膜中低温形成铋纳米晶体使得热电应用成为可能。

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