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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC
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Double-Position-Boundaries Free 3C-SiC Epitaxial Layers Grown on On-Axis 4H-SiC

机译：在轴上4H-SiC上生长的双位置边界自由3C-SiC外延层

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摘要

High quality double-position-boundaries free 3C-SiC epilayers have been successfully grown on on-axis (0001) 4H-SiC by chemical vapor deposition at optimized conditions as observed with optical microscopy and X-ray diffraction. The effect of the growth parameters, including temperature, C/Si ratio, ramp-up condition, Si/H_2 ratio, N_2 addition and pressure, on the quality of the grown layers is investigated. Different techniques, including microscopic and spectroscopic techniques, are used to characterize the epilayers. High resolution X-ray diffraction shows 2θ-ω curve with full width at half maximum of only 16 arcsec for the (111) reflection detected from a 35 μm thick 3C-SiC layer, showing the good structural quality of the layer. Reciprocal space maps confirm the absence of double-position-boundaries in a large depth of the layers. Low temperature photoluminescence measurement shows clear near-bandgap emission with sharp and single peaks, which further verifies the high quality of the epilayers.
机译：高质量的无双位边界的3C-SiC外延层已通过化学气相沉积在最佳条件下成功地在（0001）4H-SiC轴上生长，如通过光学显微镜和X射线衍射观察到的。研究了生长参数，包括温度，C / Si比，升温条件，Si / H_2比，N_2添加量和压力对生长层质量的影响。包括显微和光谱学技术在内的不同技术被用来表征外延层。高分辨率X射线衍射显示从35μm厚的3C-SiC层检测到的（111）反射的2θ-ω曲线的半峰全宽仅为16 arcsec，显示了该层的良好结构质量。相互的空间图确认了在较大的图层深度中不存在双位置边界。低温光致发光测量显示清晰的近带隙发射，具有尖峰和单峰，这进一步验证了外延层的高质量。

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