The properties of copper conductive layers electroplated from a copper hexafluorosilicate electrolytic solution have been studied. The observed resistivity is in the region of 2.9 mu OMEGA cm for an as-deposited copper layer electroplated from a conventional copper sulfate electrolytic solution. By electroplating from a copper hexafluorosilicate electrolytic solution on a low stress seed layer, a copper conductive layer with a larger grain size and lower stress can be obtained. A resistivity of 1.85 mu OMEGA cm can be attained for such an as-deposited layer. This resistivity is much lower than the 2.8 mu OMEGA cm of other as-deposited layers by conventional copper electroplating.
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