Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Pei-Yang Gu; Junkuo Gao; Cai-Jian Lu; Wangqiao Chen; Chengyuan Wang; Gang Li; Feng Zhou; Qing-Feng Xu; Jian-Mei Lu; Qichun Zhang

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Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

机译：带有低杂杂并芳基的四硝基-氧杂lix [4]芳烃的合成及其不挥发三元记忆性能

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To achieve ultra-high density memory devices with a capacity of 3n or larger, a novel larger and stable oxacalix[4]arene, 4N4OPz, is reported. 4N4OPz exhibited excellent ternary memory behavior with high ON2/ ON1/OFF current ratios of 10~(8.7)/10~(4.2)/1, low switching threshold voltage of -1.80 V/-2.87 V, and good stability for these three states.

机译：为了实现容量为3n或更大的超高密度存储设备，已报道了一种新型的更大且稳定的oxacalix [4] arene，即4N4OPz。 4N4OPz具有出色的三元存储性能，高ON2 / ON1 / OFF电流比为10〜（8.7）/ 10〜（4.2）/ 1，低开关阈值电压为-1.80 V / -2.87 V，并且在这三种状态下均具有良好的稳定性。

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来源
《Materials Horizons》 |2014年第4期|共6页
作者
Pei-Yang Gu; Junkuo Gao; Cai-Jian Lu; Wangqiao Chen; Chengyuan Wang; Gang Li; Feng Zhou; Qing-Feng Xu; Jian-Mei Lu; Qichun Zhang;
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正文语种 eng
中图分类工程材料学;
关键词
Synthesis; oligoheteroacene; memory performance;

机译：合成;杂杂并苯;记忆性能;

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1. Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance [J] . Pei-Yang Gu, Junkuo Gao, Cai-Jian Lu, Materials Horizons . 2014,第4期

机译：带有低杂杂并芳基的四硝基-氧杂lix [4]芳烃的合成及其不挥发三元记忆性能
2. In-situ growing D-A polymer from the surface of reduced graphene oxide: Synthesis and nonvolatile ternary memory effect [J] . Li Dongqi, Zhang Bin, Zhu Chunxuan, Carbon: An International Journal Sponsored by the American Carbon Society . 2019,第期

机译：原位生长D-A聚合物来自石墨烯氧化物的表面：合成和非易失性三元记忆效应
3. Synthesis, Characterization, and Nonvolatile Ternary Memory Behavior of a Larger Heteroacene with Nine Linearly Fused Rings and Two Different Heteroatoms [J] . Pei-Yang Gu, Feng Zhou, Junkuo Gao, Journal of the American Chemical Society . 2013,第38期

机译：具有九个线性稠合环和两个不同杂原子的较大杂并苯的合成，表征和非易失性三元记忆行为
4. Binary and ternary convolutional neural network acceleration by in-nonvolatile memory computing with Voltage Control Spintronics Memory (VoCSM) [C] . K. Ikegami, T. Inokuchi, S. Fujita, 2019 Electron Devices Technology and Manufacturing Conference . 2019

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5. Synthesis and characterization of aerosol silicon nanoparticle nonvolatile floating gate memory devices. [D] . Ostraat, Michele L. 2001

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6. Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory [O] . Houfang Liu, Tianqi Lu, Yuxing Li, 2020

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7. Nonvolatile Ternary Resistive Memory Performance of a Benzothiadiazole-Based Donor–Acceptor Material on ITO-Coated Glass [O] . Yang Li, Cheng Zhang, Zhiming Shi, 2021

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Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

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