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首页> 外文期刊>Microwave and optical technology letters >NOVEL LOW-COST WIDEBAND Si-BASED SUBMOUNT FOR 40 GB/S OPTOELECTRONIC DEVICES
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NOVEL LOW-COST WIDEBAND Si-BASED SUBMOUNT FOR 40 GB/S OPTOELECTRONIC DEVICES

机译：适用于40 GB / S光电设备的新型低成本宽带Si基子座

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摘要

A novel low-cost wideband Si-based submount is proposed and fabricated for 40-Gb/s optoelectronic devices. The submount contains a coplanar waveguide (CPW) for microwave-signal feeding and a TaN thin-film resistor for impedance matching. The CPW transmission line is directly formed on high-resistivity Si substrate and exhibits a transmission loss as low as 0.165 dB/mm up to 40 GHz, Such a configuration has the advantage of a simplified fabrication procedure and efficient heat dissipation. As a demonstration, a high-speed electroabsorp-tion (EA) modulator is chip-level packaged using the Si-based submount, The small-signal modulation bandwidth is measured to be more than 33 GHz, which is the first report of 40-Gb/s optoelectronic devices on Si-based submount.
机译：提出并制造了一种新颖的低成本宽带硅基底座，用于40 Gb / s光电器件。该基座包含用于微波信号馈送的共面波导（CPW）和用于阻抗匹配的TaN薄膜电阻器。 CPW传输线直接形成在高电阻率的Si基板上，并且在40 GHz以下时的传输损耗低至0.165 dB / mm。这种配置的优点是简化了制造过程并实现了高效散热。作为演示，使用基于Si的底座将高速电吸收（EA）调制器进行芯片级封装。小信号调制带宽测得超过33 GHz，这是40-基于Si的底座上的Gb / s光电设备。

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