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首页> 外文期刊>Microwave and optical technology letters >LOW-NOISE AND HIGH-LINEARITY LNA BASED ON InGaP/GaAs HBT FOR 5.3-GHz WLAN
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LOW-NOISE AND HIGH-LINEARITY LNA BASED ON InGaP/GaAs HBT FOR 5.3-GHz WLAN

机译：基于InGaP / GaAs HBT的5.3GHz WLAN低噪声，高线性度LNA

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摘要

This paper presents a low-noise and high-linearity LNA based on InGaP/GaAs HBT for 5.3-GHz WLAN,. Previous LNAs based on FET series (such as HEMTs) show excellent noise characteristics, but poor linearity. The InGaP/GaAs HBT LNA shows excellent linearity and noise characteristics because of its high base-doping concentration, The proposed LNA is fully integrated in a single chip of area 0.9 × 0.9 mm{sup}2 with high-Q spiral inductors and MIM capacitors, and is biased at the current point for optimum noise figure and gain characteristics; furthermore, excellent linearity is achieved. The measured result of the proposed LNA shows 13-dB gain, 2.1-dB noise figure, and excellent linearity with IIP3 of 5.5 dBm, The figure of merit (FOM), defined as a function of the linearity and noise figure, is 20.1 dB, which is the best result among previous LNAs.
机译：本文针对5.3 GHz WLAN提出了一种基于InGaP / GaAs HBT的低噪声，高线性度LNA。以前基于FET系列的LNA（例如HEMT）显示出出色的噪声特性，但线性度很差。 InGaP / GaAs HBT LNA由于其高的基极掺杂浓度而具有出色的线性度和噪声特性。拟议的LNA完全集成在面积为0.9×0.9 mm {sup} 2的单个芯片中，具有高Q螺旋电感器和MIM电容器，并在当前点偏置以获得最佳噪声系数和增益特性;此外，获得了优异的线性度。所提议的LNA的测量结果显示出13dB的增益，2.1dB的噪声系数以及5.5 dBm的IIP3的出色线性度，品质因数（FOM）被定义为线性度和噪声系数的函数，为20.1 dB ，这是以前的LNA中最好的结果。

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