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首页> 外文期刊>Nano letters >Dually active silicon nanowire transistors and circuits with equal electron and hole transport
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Dually active silicon nanowire transistors and circuits with equal electron and hole transport

机译：具有相等的电子和空穴传输的双活性硅纳米线晶体管和电路

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摘要

We present novel multifunctional nanocircuits built from nanowire transistors that uniquely feature equal electron and hole conduction. Thereby, the mandatory requirement to yield energy efficient circuits with a single type of transistor is shown for the first time. Contrary to any transistor reported up to date, regardless of the technology and semiconductor materials employed, the dually active silicon nanowire channels shown here exhibit an ideal symmetry of current-voltage device characteristics for electron (n-type) and hole (p-type) conduction as evaluated in terms of comparable currents, turn-on threshold voltages, and switching slopes. The key enabler to symmetry is the selective tunability of the tunneling transmission of charge carriers as rendered by the combination of the nanometer-scale dimensions of the junctions and the application of radially compressive strain. To prove the advantage of this concept we integrated dually active transistors into cascadable and multifunctional one-dimensional circuit strings. The nanocircuits confirm energy efficient switching and can further be electrically configured to provide four different types of operation modes compared to a single one when employing conventional electronics with the same amount of transistors.
机译：我们提出了由纳米线晶体管构建的新颖多功能纳米电路，该电路独特地具有相等的电子和空穴传导能力。因此，首次显示了使用单一类型的晶体管生产高能效电路的强制性要求。与迄今报道的任何晶体管相反，无论采用何种技术和半导体材料，此处显示的双活性硅纳米线通道均具有理想的电子（n型）和空穴（p型）电流-电压器件特性对称性根据可比较的电流，导通阈值电压和开关斜率评估导通。对称性的关键使能因素是电荷载流子隧穿传输的选择性可调谐性，这是由结的纳米级尺寸和径向压缩应变的组合所产生的。为了证明此概念的优势，我们将双有源晶体管集成到可级联的多功能一维电路串中。当采用具有相同数量的晶体管的常规电子器件时，与单个模式相比，纳米电路可实现节能切换，并且可以进一步进行电气配置，以提供四种不同类型的操作模式。

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