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Control of Si nanowire growth by oxygen

机译:通过氧气控制Si纳米线的生长

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Semiconductor nanowires formed using the vapor-liquid-solid mechanism are routinely grown in many laboratories, but a comprehensive understanding of the key factors affecting wire growth is still lacking. In this paper we show that, under conditions of low disilane pressure and higher temperature, long, untapered Si wires cannot be grown, using Au catalyst, without the presence of oxygen. Exposure to oxygen, even at low levels, reduces the diffusion of Au away from the catalyst droplets. This allows the droplet volumes to remain constant for longer times and therefore permits the growth of untapered wires. This effect is observed for both gas-phase and surface-bound oxygen, so the source of oxygen is unimportant. The control of oxygen exposure during growth provides a new tool for the fabrication of long, uniform-diameter structures, as required for many applications of nanowires.
机译:使用汽-液-固机理形成的半导体纳米线通常在许多实验室中生长,但是仍然缺乏对影响线生长的关键因素的全面理解。在本文中,我们表明,在低乙硅烷压力和较高温度的条件下,如果没有氧气,使用Au催化剂就不能生长长而无锥度的Si线。暴露在氧气中,即使含量很低,也会降低Au从催化剂液滴中的扩散。这允许液滴体积在更长的时间内保持恒定,并因此允许未锥形丝的生长。对于气相氧气和表面结合的氧气都可以观察到这种效果,因此氧气的来源并不重要。生长期间对氧气暴露的控制为纳米线的许多应用所需的长且均匀直径结构的制造提供了一种新工具。

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