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Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots

机译：半导体量子线/量子点中从二维到三维量子限制的转变

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摘要

We report the photoluminescence (PL) and polarization-resolved PL characteristics of a novel GaAs/AlGaAs quantum wire/dot semiconductor system, realized by metalorganic vapor-phase epitaxy of site-controlled, self-assembled nanostructures in inverted tetrahedral pyramids. By systematically changing the length of the quantum wires, we implement a continuous transition between the regimes of two-dimensional and three-dimensional quantum confinement. The two main evidences for this transition are observed experimentally and confirmed theoretically: (i) strongly blue-shifted ground-state emission, accompanied by increase separation of ground and excited transition energies; and (ii) change in the orientation of the main axis of linear polarization of the photoluminescence, from parallel to perpendicular with respect to the wire axis. This latter effect, whose origin is shown to be purely due to quantum confinement and valence band mixing, sets in at wire lengths of only similar to 30 nm.
机译：我们报告了一种新型GaAs / AlGaAs量子线/点半导体系统的光致发光（PL）和偏振分辨的PL特性，该系统通过金属有机气相外延实现了位置受控的自组装纳米结构在倒四面体金字塔中的实现。通过系统地改变量子线的长度，我们实现了二维和三维量子约束机制之间的连续过渡。通过实验观察并从理论上证实了这一转变的两个主要证据：（i）强烈的蓝移基态发射，伴随着地面和激发态跃迁能的增加分离; （ii）相对于线轴，光致发光的线性偏振的主轴线的方向从平行变为垂直。后者的起因纯粹是由于量子限制和价带混合而产生，仅出现在大约30 nm的导线长度上。

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