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III-V nanowire growth mechanism: V/III ratio and temperature effects

机译：III-V纳米线的生长机理：V / III比率和温度效应

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摘要

We have studied the dependence of Au-assisted InAs nanowire (NW) growth on InAs(111)B substrates as a function of substrate temperature and input V/III precursor ratio using organometallic vapor-phase epitaxy. Temperature-dependent growth was observed within certain temperature windows that are highly dependent on input V/III ratios. This dependence was found to be a direct consequence of the drop in NW nucleation and growth rate with increasing V/III ratio at a constant growth temperature due to depletion of indium at the NW growth sites. The growth rate was found to be determined by the local V/III ratio, which is dependent on the input precursor flow rates, growth temperature, and substrate decomposition. These studies advance understanding of the key processes involved in III-V NW growth, support the general validity of the vapor-liquid-solid growth mechanism for III-V NWs, and improve rational control over their growth morphology.
机译：我们已经研究了有机金属气相外延对金辅助InAs纳米线（NW）生长在InAs（111）B衬底上的依赖性与衬底温度和输入V / III前驱体比率的关系。在某些高度依赖于输入V / III比的温度范围内观察到了温度依赖性的增长。发现这种依赖性是在恒定生长温度下，由于NW生长位点铟的耗尽，随着V / III比增加，NW成核和生长速率下降的直接结果。发现生长速率由局部V / III比确定，其取决于输入的前体流速，生长温度和底物分解。这些研究提高了对III-V NW生长涉及的关键过程的理解，支持了III-V NW汽-液-固生长机制的一般有效性，并改善了对其生长形态的合理控制。

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