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首页> 外文期刊>Nanotechnology >Indium tin oxide nanopillar electrodes in polymer/fullerene solar cells
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Indium tin oxide nanopillar electrodes in polymer/fullerene solar cells

机译：聚合物/富勒烯太阳能电池中的氧化铟锡纳米柱电极

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摘要

Using high surface area nanostructured electrodes in organic photovoltaic (OPV) devices is a route to enhanced power conversion efficiency. In this paper, indium tin oxide (ITO) and hybrid ITO/SiO_2 nanopillars are employed as three-dimensional high surface area transparent electrodes in OPVs. The nanopillar arrays are fabricated via glancing angle deposition (GLAD) and electrochemically modified with nanofibrous PEDOT:PSS (poly(3,4- ethylenedioxythiophene):poly(p-styrenesulfonate)). The structures are found to have increased surface area as characterized by porosimetry. When applied as anodes in polymer/fullerene OPVs (architecture: commercial ITO/GLAD ITO/PEDOT:PSS/P3HT:PCBM/Al, where P3HT is 2,5-diyl-poly(3-hexylthiophene) and PCBM is [6,6]-phenyl-C_(61)-butyric acid methyl ester), the air-processed solar cells incorporating high surface area, PEDOT:PSS-modified ITO nanoelectrode arrays operate with improved performance relative to devices processed identically on unstructured, commercial ITO substrates. The resulting power conversion efficiency is 2.2% which is a third greater than for devices prepared on commercial ITO. To further refine the structure, insulating SiO _2 caps are added above the GLAD ITO nanopillars to produce a hybrid ITO/SiO_2 nanoelectrode. OPV devices based on this system show reduced electrical shorting and series resistance, and as a consequence, a further improved power conversion efficiency of 2.5% is recorded.
机译：在有机光伏（OPV）器件中使用高表面积的纳米结构电极是提高功率转换效率的途径。本文采用氧化铟锡（ITO）和混合ITO / SiO_2纳米柱作为OPV中的三维高表面积透明电极。纳米柱阵列是通过掠角沉积（GLAD）制成的，并用纳米纤维PEDOT：PSS（聚（3,4-乙二氧基噻吩）：聚（对苯乙烯磺酸盐））进行电化学修饰。如孔隙率法所表征，发现该结构具有增加的表面积。当用作聚合物/富勒烯OPV中的阳极时（结构：商业ITO / GLAD ITO / PEDOT：PSS / P3HT：PCBM / Al，其中P3HT为2,5-二基-聚（3-己基噻吩），PCBM为[6,6 ]-苯基-C_（61）-丁酸甲酯），结合了高表面积的空气处理太阳能电池，PEDOT：PSS改性的ITO纳米电极阵列相对于在非结构化商用ITO基板上进行相同处理的器件，其性能得到了改善。产生的功率转换效率为2.2％，比在商用ITO上制备的器件高三分之一。为了进一步改善结构，在GLAD ITO纳米柱上方添加了绝缘的SiO _2帽，以生产ITO / SiO_2纳米混合电极。基于该系统的OPV器件显示出减少的电气短路和串联电阻，因此，记录到的功率转换效率进一步提高了2.5％。

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