• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Self-induced preparation of TiSi nanopins by chemical vapor deposition
【24h】

Self-induced preparation of TiSi nanopins by chemical vapor deposition

机译：化学气相沉积自诱导制备TiSi纳米针

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

High-density single-crystalline orthorhombic TiSi nanorods and nanopins have been successfully prepared for the first time on a Ti5Si3 layer by chemical vapor deposition, using SiH4 and TiCl4 as the precursors. The quadrate nanorods are approximately 0.5 mu m long and 30 nm x 30 nm in area. The nanopins are 0.7-1 mu m long in total, with the quadrate tip about 200 nm long and 50 nm x 50 nm in area. The TiSi nanorods and nanopins grow along the [110] direction of the orthorhombic TiSi crystal from the bottom, with the tip being pushed upwards. The growth process can be defined as a self-induced growth. The self-induction mechanism addressed here expands our understanding of growing nanostructures.
机译：使用SiH4和TiCl4作为前驱体，通过化学气相沉积法成功地在Ti5Si3层上首次成功制备了高密度单晶正交晶体TiSi纳米棒和纳米针。方形纳米棒的长度约为0.5微米，面积为30 nm x 30 nm。纳米针的总长度为0.7-1微米，方形尖端的长度约为200 nm，面积为50 nm x 50 nm。 TiSi纳米棒和纳米针从底部沿正交晶体TiSi晶体的[110]方向生长，尖端向上推动。生长过程可以定义为自我诱导的生长。此处讨论的自感应机制扩展了我们对生长的纳米结构的理解。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号