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The evolution of the fraction of Er ions sensitized by Si nanostructures in silicon-rich silicon oxide thin films

机译：富硅氧化硅薄膜中被硅纳米结构敏化的Er离子分数的演变

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摘要

Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are performed on Er-doped silicon-rich silicon oxide (SRO:Er) thin films grown under NH3 atmosphere. These PL measurements of the Er3+ emission at 1.54 μm under non-resonant pumping with the Er f-f transitions are obtained for different Er~(3+) concentrations, ranging from 0.05 to 1.4 at.%, and various post-growth annealing temperatures of the layers. High resolution transmission electron microscopy (HRTEM) and energy-filtered TEM (EFTEM) analysis show a high density of Si nanostructures composed of amorphous and crystalline nanoclusters varying from 2.7 x 10~(18) to 10~(18) cm~(-3) as a function of the post-growth annealing temperature. Measurements of PL lifetime and effective Er excitation cross section for all the samples under non-resonant optical excitation with the Er~(3+) atomic energy levels show that the number of Er~(3+) ions sensitized by the silicon-rich matrix decreases as the annealing temperature is increased from 500 to 1050 °C. The origin of this effect is attributed to the reduction of the density of sensitizers for Er ions in the SRO matrix when the annealing 'temperature increases. Finally, extended x-ray absorption fine-structure spectroscopy (EXAFS) shows a strong correlation between the number of emitters and the mean local order around the erbium ions.
机译：在精细加工过程中，对在NH3气氛下生长的掺Er的富硅氧化硅（SRO：Er）薄膜进行了光致发光（PL）和时间分辨PL实验。在不同的Er〜（3+）浓度范围从0.05到1.4 at。％以及不同的生长后退火温度下，获得了在具有Er ff跃迁的非共振泵浦下1.53μm处Er3 +发射的PL测量。层。高分辨率透射电子显微镜（HRTEM）和能量过滤TEM（EFTEM）分析表明，由非晶和晶体纳米团簇组成的Si纳米结构的密度高，范围从2.7 x 10〜（18）到10〜（18）cm〜（-3） ）作为生长后退火温度的函数。在具有Er〜（3+）原子能级的非共振光激发下所有样品的PL寿命和有效Er激发截面的测量结果表明，富硅基质敏化的Er〜（3+）离子数随退火温度从500升高到1050°C而降低。该效应的起因归因于当退火温度升高时，SRO基体中Er离子敏化剂的密度降低。最后，扩展的X射线吸收精细结构光谱学（EXAFS）显示出发射体的数量与around离子周围的平均局部阶跃之间有很强的相关性。

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