The large-scale integration of high-performance silicon nanowire field effect transistors

Li QL; Zhu XX; Yang Y; Ioannou DE; Xiong HD; Kwon DW; Suehle JS; Richter CA

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The large-scale integration of high-performance silicon nanowire field effect transistors

机译：高性能硅纳米线场效应晶体管的大规模集成

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In this work we present a CMOS-compatible self-aligning process for the large-scale-integration of high-performance nanowire field effect transistors with well-saturated drain currents, steep subthreshold slopes at low drain voltage and a large on/off current ratio (>10(7)). The subthreshold swing is as small as 45 mV/dec, which is substantially beyond the thermodynamic limit (60 mV/dec) of conventional planar MOSFETs. These excellent device characteristics are achieved by using a clean integration process and a device structure that allows effective gate-channel-source coupling to tune the source/drain Schottky barriers at the nanoscale.

机译：在这项工作中，我们提出了一种用于大规模集成高性能纳米线场效应晶体管的CMOS兼容自对准工艺，该晶体管具有良好饱和的漏极电流，低漏极电压下的亚阈值斜率以及大的开/关电流比（> 10（7））。亚阈值摆幅小至45 mV / dec，大大超出了常规平面MOSFET的热力学极限（60 mV / dec）。这些优异的器件特性是通过使用干净的集成工艺和器件结构实现的，该器件结构允许有效的栅极-沟道-源极耦合，从而在纳米级调整源/漏肖特基势垒。

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《Nanotechnology》 |2009年第41期|共5页
作者
Li QL; Zhu XX; Yang Y; Ioannou DE; Xiong HD; Kwon DW; Suehle JS; Richter CA;
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正文语种 eng
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1. The large-scale integration of high-performance silicon nanowire field effect transistors [J] . Li QL, Zhu XX, Yang Y, Nanotechnology . 2009,第41期

机译：高性能硅纳米线场效应晶体管的大规模集成
2. An innovative large scale integration of silicon nanowire-based field effect transistors [J] . M. Legallais, T.T.T. Nguyen, M. Mouis, Solid-State Electronics . 2018,第MAY期

机译：基于硅纳米线的场效应晶体管的创新大规模集成
3. Chemical Gated Field Effect Transistor by Hybrid Integration of One-Dimensional Silicon Nanowire and Two-Dimensional Tin Oxide Thin Film for Low Power Gas Sensor [J] . Han Jin-Woo, Rim Taiuk, Baek Chang-Ki, ACS applied materials & interfaces . 2015,第38期

机译：一维硅纳米线与二维氧化锡薄膜混合集成的化学门控场效应晶体管，用于低功率气体传感器
4. High-performance Quantum Dots decorated graphene/ZnO-nanowire field-emission type field-effect transistor [C] . Zhi Tao, Yuxuan Chen International Vacuum Nanoelectronics Conference . 2015

机译：高性能量子点修饰石墨烯/ ZnO-纳米线场致发射型场效应晶体管
5. Nanowire-based devices for electronic and optical applications: Solution-gated silicon nanowire field effect transistors and one-dimensional gold nanoparticle arrays [D] . Hu, Wenchong 2010

机译：用于电子和光学应用的基于纳米线的设备：溶液门控硅纳米线场效应晶体管和一维金纳米粒子阵列
6. Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications [O] . Paolo Livi, Moria Kwiat, Amir Shadmani, -1

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7. Functionalization and microfluidic integration of silicon nanowire biologically gated field effect transistors [O] . Pfreundt Andrea, Svendsen Winnie Edith, Dimaki Maria, 2016

机译：硅纳米线生物门控场效应晶体管的功能化和微流体集成
8. Design, Fabrication and Characterization of High-Performance Silicon Nanowire Transistors [R] . Li, Q., Zhu, X., Yang, Y., 2008

机译：高性能硅纳米线晶体管的设计，制作和表征

The large-scale integration of high-performance silicon nanowire field effect transistors

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