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In situ nanowire growth for electrical interconnects

机译:用于电互连的原位纳米线生长

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We report a technique to grow a single tungsten nanowire at a predetermined location by using field emission in a low-pressure tungsten carbonyl atmosphere. A sharp tip is first made to contact the intended location of growth. Electrical current is then passed through the contact. When the contact is broken, the resulting localized plasma discharge at the point of breakage causes a nanowire to initiate. Continued growth at low currents results in a single nanowire a few nanometres in diameter and up to tens of micrometres in length. The nanowire is overcoated by a thin carbon layer which protects the metal core from oxidation and corrosion. Electrical measurements of nanowires grown between two pads show resistivity one to two orders of magnitude higher than that of bulk tungsten. The technique can be applied to the interconnection of nanostructures to electrodes on a die.
机译:我们报告了一种通过在低压羰基钨气氛中使用场发射在预定位置生长单个钨纳米线的技术。首先制作一个锋利的尖端,以接触预期的生长位置。然后,电流通过触点。当触点断开时,在断开点产生的局部等离子体放电会导致纳米线引发。在低电流下持续生长会导致单根纳米线的直径达到几纳米,长度达到数十微米。纳米线被一层薄碳层覆盖,该薄碳层保护金属芯免受氧化和腐蚀。在两个焊盘之间生长的纳米线的电测量结果显示,其电阻率比块状钨的电阻率高一到两个数量级。该技术可以应用于将纳米结构互连到管芯上的电极。

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