Single-photon emitting diode based on a quantum dot in a micro-pillar

Farrow T; See P; Bennett AJ; Ward MB; Atkinson P; Cooper K; Ellis DJP; Unitt DC; Ritchie DA; Shields AJ

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Single-photon emitting diode based on a quantum dot in a micro-pillar

机译：基于微柱中量子点的单光子发射二极管

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We have fabricated a single-photon emitting diode based on a quantum dot in a micro-pillar cavity. By temperature tuning the dot emission into resonance with the cavity mode we see an enhancement in the collected photon intensity at 40 K. We perform autocorrelation measurements on the electroluminescence at fixed bias, observing photon anti-bunching. Due to the low resistance and capacitance of our device we can inject current pulses shorter than the lifetime of the quantum state, producing single-photon emission with g((2))(0) = 0.17.

机译：我们已经基于微柱腔中的量子点制造了单光子发射二极管。通过将点发射温度调整为与腔模共振，我们可以看到在40 K时收集到的光子强度有所增强。我们在固定偏置下对电致发光进行自相关测量，观察到光子的反聚束。由于我们设备的低电阻和电容，我们可以注入比量子态寿命短的电流脉冲，从而产生g（（2））（0）= 0.17的单光子发射。

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来源
《Nanotechnology》 |2008年第34期|共4页
作者
Farrow T; See P; Bennett AJ; Ward MB; Atkinson P; Cooper K; Ellis DJP; Unitt DC; Ritchie DA; Shields AJ;
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正文语种 eng
中图分类一般工业技术;
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MICROCAVITIES;

机译：微腔;

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专利

1. Single-photon emitting diode based on a quantum dot in a micro-pillar [J] . Farrow T, See P, Bennett AJ, Nanotechnology . 2008,第34期

机译：基于微柱中量子点的单光子发射二极管
2. Single-photon light-emitting diodes based on preselected quantum dots using a deterministic lithography technique [J] . Sartison Marc, Seyfferle Simon, Kolatschek Sascha, Applied Physics Letters . 2019,第22期

机译：基于确定性光刻技术的基于预选量子点的单光子发光二极管
3. Single-photon light-emitting diodes based on preselected quantum dots using a deterministic lithography technique [J] . Sartison Marc, Seyfferle Simon, Kolatschek Sascha, Applied Physics Letters . 2019,第22期

机译：使用确定性光刻技术基于预选量子点的单光子发光二极管
4. Study of the 700 nm emitting spectrum using GalnP quantum dots in the AlGalnP-based light emitting diodes [C] . Hwa Sub Oh, Sang Mook Kim, Huyn Haeng Lee, Proceedings of the 12th international symposium on the science and technology of light sources and the 3rd international conference on white LEDs and solid state lighting . 2010

机译：在基于AlGalnP的发光二极管中使用GalnP量子点研究700 nm的发射光谱
5. Gallium arsenide-based quantum dot vertical-cavity surface-emitting lasers and microcavity light-emitting diodes. [D] . Zou, Zhengzhong. 2002

机译：基于砷化镓的量子点垂直腔面发射激光器和微腔发光二极管。
6. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures [O] . Siming Chen, Wei Li, Ziyang Zhang, 2015

机译：通过使用混合量子阱/量子点结构的具有290nm发射带宽的基于GaAs的超发光发光二极管
7. Quantum key distribution using quantum dot single-photon emitting diodes in the red and near infrared spectral range [O] . Tobias Heindel, Christian A Kessler, Markus Rau, 2012

机译：量子密钥分布在红色和近红外光谱范围内使用量子点单光子发射二极管

Single-photon emitting diode based on a quantum dot in a micro-pillar

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