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首页> 外文期刊>Nanotechnology >Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography
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Field emission from a periodic amorphous silicon pillar array fabricated by modified nanosphere lithography

机译：改性纳米球光刻技术制备的周期性非晶硅柱阵列的场发射

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摘要

We prepare an array of amorphous silicon nanopillars by using a modified nanosphere lithography method. The fabrication process includes three steps: ( 1) 70 nm thick a-Si film was deposited on a crystalline silicon substrate; ( 2) the substrate was coated with a monolayer of polystyrene ( PS) spheres to form an ordered structure on the a-Si thin film surface; ( 3) the sample was etched by reactive ion etching to produce the amorphous silicon pillar array. The results of field emission measurements show a low turn-on electrical field of about 4.5 V mu m(-1) at a current density of 10 mu A cm(-2). A relatively high current density exceeding 0.2 mA cm(-2) at 9 V mu m(-1) was also obtained. The field enhancement factor is calculated to be about 1240 according to the Fowler-Nordheim (FN) relationship. The good field emission characteristics are attributed to the geometrical morphology, crystal structure and the high density of the field emitter of the silicon nanopillar.
机译：我们通过使用改进的纳米球光刻方法制备了一系列非晶硅纳米柱。该制造过程包括三个步骤：（1）在晶体硅衬底上沉积70 nm厚的a-Si膜; （2）在基片上涂一层单层的聚苯乙烯（PS）球，以在a-Si薄膜表面上形成有序结构; （3）通过反应离子蚀刻对样品进行蚀刻，以产生非晶硅柱阵列。场发射测量的结果表明，在10μAcm（-2）的电流密度下，低导通电场约为4.5 Vμm（-1）。还获得了相对较高的电流密度，在9 Vμm（-1）时超过0.2 mA cm（-2）。根据Fowler-Nordheim（FN）关系，计算出的场增强因子约为1240。良好的场发射特性归因于硅纳米柱的几何形态，晶体结构和场发射器的高密度。

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