Photoconductivity spectra of Ge/Si heterostructures with Ge QDs

O V Vakulenko; S V Kondratenko; A S Nikolenko

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Photoconductivity spectra of Ge/Si heterostructures with Ge QDs

机译：Ge量子点的Ge / Si异质结构的光电导光谱

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Spectral dependences of lateral photoconductivity of Si_(1-x)Ge_x heterostructures with Ge nanoislands were investigated at 77 and 290 K. It is supposed that the photocurrent in the range 0.81-1.02 eV at 290 K is conditioned by a nonequilibrium carrier generated by interband transitions in Ge nanoislands. Si_(1-x)Ge_x heterostructures with Ge nanoislands showed lateral photocurrent in the range from 0.32 to 1.2 eV at 77 K. Such a photocurrent is explained by hole transitions from the localized states of light and heavy holes in Ge nanoislands into the delocalized states of the valence band. It was found that the valence bandgap offset of the heterojunction between the nanoislands and strained c-Si surrounding was 0.48 eV.

机译：研究了在77和290 K时具有Ge纳米岛的Si_（1-x）Ge_x异质结构的横向光电导的光谱依赖性。假定在290 K处0.81-1.02 eV范围内的光电流受到带间产生的非平衡载流子的调节锗纳米岛的过渡。具有Ge纳米岛的Si_（1-x）Ge_x异质结构在77 K时显示横向光电流在0.32至1.2 eV范围内。这种光电流可以通过空穴从Ge纳米岛中轻，重空穴的局域态转变为离域态来解释价带的发现纳米岛和应变c-Si周围的异质结的价带隙偏移为0.48eV。

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《Nanotechnology》 |2007年第18期|共5页
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O V Vakulenko; S V Kondratenko; A S Nikolenko;
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1. Photoconductivity spectra of Ge/Si heterostructures with ge QDs [J] . Vakulenko OV, Kondratenko SV, Nikolenko AS, Nanotechnology . 2007,第18期

机译：具有Ge QD的Ge / Si异质结构的光电导谱
2. Ultra-sensitive photoresponse and persistent photoconductivity in modulation doped Ge/SiGe and Si/SiGe heterostructures [J] . M N Vijayaraghavan, V Venkataraman, Y H Xie Semiconductor science and technology . 2000,第10期

机译：调制掺杂的Ge / SiGe和Si / SiGe异质结构中的超灵敏光响应和持久光电导性
3. Effectiveness of reactive oxygen species generated from rGO/CdS QD heterostructure for photodegradation and disinfection of pollutants in waste water [J] . Materials science & engineering . 2020,第Mara期

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4. Far IR impurity photoconductivity in strained MQW Ge/GeSi heterostructures [C] . V.Gavrilenko, I.Erofeeva, A.Korotkov, International symposium on compound semiconductors . 1997

机译：应变MQW Ge / gesi异质结构中的远红外杂质光电导性
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7. Charge Transport: Photomodulation of Charge Transport in All‐Semiconducting 2D–1D van der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect (Adv. Mater. 26/2020) [O] . Zhaoyang Liu, Haixin Qiu, Can Wang, 2020

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Photoconductivity spectra of Ge/Si heterostructures with Ge QDs

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