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Photoconductivity spectra of Ge/Si heterostructures with ge QDs

机译:具有Ge QD的Ge / Si异质结构的光电导谱

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Spectral dependences of lateral photoconductivity of Si1-xGex heterostructures with Ge nanoislands were investigated at 77 and 290 K. It is supposed that the photocurrent in the range 0.81-1.02 eV at 290 K is conditioned by a nonequilibrium carrier generated by interband transitions in Ge nanoislands. Si1-xGex heterostructures with Ge nanoislands showed lateral photocurrent in the range from 0.32 to 1.2 eV at 77 K. Such a photocurrent is explained by hole transitions from the localized states of light and heavy holes in Ge nanoislands into the delocalized states of the valence band. It was found that the valence bandgap offset of the heterojunction between the nanoislands and strained c-Si surrounding was 0.48 eV.
机译:研究了锗纳米岛Si1-xGex异质结构在77和290 K时横向光电导的光谱依赖性。假定在290 K时0.81-1.02 eV范围内的光电流受锗纳米岛中带间跃迁产生的非平衡载流子的调节。具有Ge纳米岛的Si1-xGex异质结构在77 K时显示横向光电流在0.32至1.2 eV范围内。这种光电流可以通过空穴从Ge纳米岛中轻重空穴的局域态转变为价带的离域态来解释。发现纳米岛和应变c-Si周围的异质结的价带隙偏移为0.48eV。

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