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Fabrication of TiNi shape memory alloy microactuators by ion beam sputter deposition

机译:离子束溅射沉积制备TiNi形状记忆合金微驱动器。

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We report on the production of thin films of TiNi shape memory alloy, grown by ion beam sputter deposition (IBSD) using a Kaufman-type source, for microactuator applications. IBSD is a vacuum-coating process in which a target is bombarded by accelerated ions from a showered ion beam source and sputtered atoms of the target material are deposited onto a nearby substrate. In this work, argon ions at energies up to 1500 eV and current densities of similar to 1 mA cm(-2) are used to bombard sectored targets of titanium and nickel in order to deposit TiNi films onto unheated substrates. The films were characterized by electrical resistivity measurements and x-ray reflectometry. R-phase and martensitic transformations are seen without high-temperature annealing and the shape memory properties are compared with those of films prepared by DC and RF magnetron sputtering. [References: 15]
机译:我们报道了使用Kaufman型源通过离子束溅射沉积(IBSD)生长的TiNi形状记忆合金薄膜的生产,用于微致动器应用。 IBSD是一种真空镀膜工艺,其中目标被来自喷淋离子束源的加速离子轰击,并且靶材料的溅射原子沉积到附近的基材上。在这项工作中,使用能量高达1500 eV的氩离子和接近1 mA cm(-2)的电流密度轰击钛和镍的扇形靶,以便将TiNi膜沉积到未加热的基板上。通过电阻率测量和X射线反射法表征膜。在不进行高温退火的情况下,可以看到R相和马氏体相变,并且将形状记忆性能与通过DC和RF磁控管溅射制备的薄膜进行了比较。 [参考:15]

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