• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Investigations of niobium carbide contact for carbon-nanotube-based devices
【24h】

Investigations of niobium carbide contact for carbon-nanotube-based devices

机译：碳纳米管基器件的碳化铌接触研究

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Single-walled carbon nanotube (SWCNT) field effect transistors (FETs) with Nb contacts have been fabricated and upon annealing in vacuum at 700 degrees C for 1 h, niobium carbide (Nb2C) is formed at the Nb/SWCNT interface. The Nb2C/SWCNT contacts demonstrate a very small Schottky barrier height of similar to 18 meV (decreased by >80% relative to that of pristine Nb/SWCNT contact of similar to 98 meV) to p-type transport. This is attributed to the higher work function of Nb2C (similar to 5.2 eV) than Nb (similar to 4.3 eV) and better bonding between Nb2C and SWCNTs. The performance of Nb2C-contacted SWCNT FETs is as follows: the p-channel ON current is as high as 0.5 mu A at V-DS = 0.1 V, the I-ON/I-OFF ratio is up to similar to 10(5) and the subthreshold slope is similar to 550 mV/dec, which is as good as that of titanium carbide (TiC-) and Pd-contacted SWCNT FETs. Compared with TiC, Nb2C contacts yield more unipolar p-type SWCNT FETs, as a result of the Nb2Cs higher work function. More importantly, Nb2C contacts can form near-ohmic contacts to both large-(>= 1.6 nm) and small-diameter (similar to 1 nm) SWCNTs, while Pd can only form near-ohmic contacts for large-diameter SWCNTs. Moreover, the Nb2C contacts demonstrate good stability in air.
机译：已经制造出具有Nb触点的单壁碳纳米管（SWCNT）场效应晶体管（FET），并且在700摄氏度的真空中退火1小时后，会在Nb / SWCNT界面处形成碳化铌（Nb2C）。 Nb2C / SWCNT接触点显示出非常小的肖特基势垒高度，类似于18 meV（相对于原始的Nb / SWCNT接触点类似于98 meV减小了80％）到p型传输。这归因于Nb2C（约5.2 eV）比Nb（约4.3 eV）更高的功函，以及Nb2C和SWCNT之间的键合更好。 Nb2C接触的SWCNT FET的性能如下：在V-DS = 0.1 V时，p沟道导通电流高达0.5μA，I-ON / I-OFF比高达10（5 ），亚阈值斜率类似于550 mV / dec，与碳化钛（TiC-）和Pd接触的SWCNT FET的斜率相似。与TiC相比，由于Nb2C具有更高的功函，因此Nb2C触点可产生更多的单极p型SWCNT FET。更重要的是，Nb2C触点可以与大直径（> = 1.6 nm）和小直径（类似于1 nm）SWCNT形成近欧姆触点，而Pd只能为大直径SWCNT形成近欧姆触点。此外，Nb2C触点在空气中显示出良好的稳定性。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号