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Low-temperature In_2O_3 nanowire luminescence properties as a function of oxidizing thermal treatments

机译:In_2O_3纳米线的低温发光特性与氧化热处理的关系

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In the present work the optical properties of In_2O_3 nanowires, grown by the vapour transport process, have been investigated by means of photo- (PL) and cathodo-luminescence (CL), applied in the ultraviolet (UV)-visible range. Although In_2O_3 is expected not to emit light at room temperature, a complex photo-luminescence emission spectrum has been revealed and its temperature dependence has been carefully analysed by varying the temperature from 20 to 300 K. The influence of the substrate on the photo-luminescence spectra has been studied by performing low-temperature measurements on In_2O_3 nanowires deposited both on alumina and silicon substrates. Some samples have been submitted to suitable thermal treatments (in oxygen-rich atmosphere at 1000 deg C), whose effects on the In_2O_3 nanowires' emission have been put in evidence. When performed with low magnification, cathodo-luminescence has revealed the same features as photo-luminescence spectroscopy. When applied with high magnification, cathodo-luminescence can provide the emission spectra of a single nanostructure. The CL spectra have been measured for the first time on a single In_2O_3 nanowire, before and after in situ electron-beam irradiation. Thanks to this comparative analysis, the effectiveness of the growth procedure in obtaining good-quality materials has been demonstrated and the unexpected bands exhibited by In_2O_3 nanowires have been tentatively attributed to specific defects. In particular, an orange emission, whose amplitude can be increased by submitting the sample to appropriate thermal treatments, has been revealed (both with PL and CL spectroscopy) and might be exploited for visible laser applications.
机译:在本工作中,已经通过在可见光范围内的光(PL)和阴极发光(CL)研究了通过蒸汽传输过程生长的In_2O_3纳米线的光学特性。尽管预计In_2O_3在室温下不发光,但已揭示出复杂的光致发光光谱,并通过将温度从20 K更改为300 K仔细分析了其对温度的依赖性。基板对光致发光的影响通过对沉积在氧化铝和硅衬底上的In_2O_3纳米线进行低温测量来研究光谱。一些样品已经接受了适当的热处理(在1000摄氏度的富氧气氛中),其对In_2O_3纳米线发射的影响已得到证明。当以低放大倍数执行时,阴极发光显示出与光致发光光谱相同的特征。当以高放大倍数应用时,阴极发光可提供单个纳米结构的发射光谱。在原位电子束辐照之前和之后,首次在一条In_2O_3纳米线上测量了CL光谱。由于这种比较分析,已证明了生长过程在获得优质材料方面的有效性,并且In_2O_3纳米线表现出的意外谱带已初步归因于特定缺陷。尤其是,已经发现了橙色发射,其振幅可以通过将样品进行适当的热处理而增加(同时使用PL和CL光谱法),并且可以用于可见激光应用。

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