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Bandstructures of conical quantum dots with wetting layers

机译：具有润湿层的锥形量子点的能带结构

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The influence of wetting-layer states on quantum-dot states and vice versa is analysed numerically for electrons in the conduction band in the general case with arbitrary kinetic energy in the plane of the quantum-well wetting layer. Since the analysed quantum dot is embedded in a barrier material with different properties, the effective mass approximation methodology leads to a Schrodinger model with discontinuous coefficients. This complicates the analysis and, in addition, requires a special attention to the formulation of boundary conditions for the entire structure, consisting of the quantum dot with wetting layer embedded in a barrier material. In the present paper, the complete model is formulated and solved numerically via a variational approach based on finite element approximations and Arnoldi iterations. By analysing different geometrical configurations, we demonstrate that the ground eigenstate of the entire structure can be considerably affected by the presence of the wetting layer. The dependency demonstrated between eigenstates of the 'pure' quantum dots and the quantum-well wetting layers indicates that a conventional analysis of quantum-dot structures without accounting for wetting layers may not be sufficient for an adequate characterization of quantum dots as active regions in future electronic and optical devices.
机译：在通常情况下，在量子阱湿润层平面内具有任意动能的情况下，对于导带中的电子，数值分析了湿润层状态对量子点状态的影响，反之亦然。由于所分析的量子点嵌入具有不同特性的势垒材料中，因此有效的质量近似方法会导致具有不连续系数的Schrodinger模型。这使分析变得复杂，此外，还需要特别注意整个结构的边界条件的制定，该边界条件由量子点组成，该量子点具有嵌入阻挡层材料中的润湿层。在本文中，通过基于有限元逼近和Arnoldi迭代的变分方法，建立了完整的模型并对其进行了数值求解。通过分析不同的几何构型，我们证明了整个结构的地面本征态会受到润湿层的影响。 “纯”量子点的本征态与量子阱润湿层之间的依存关系表明，对量子点结构进行常规分析而不考虑润湿层可能不足以将量子点作为未来的有源区域进行充分表征电子和光学设备。

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