1.3-1.4 #mu#m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

V A Egorov; G E Cirlin

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1.3-1.4 #mu#m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

机译：在GaAs单一和邻近衬底上生长的InAs / GaAs量子点多层结构发出的1.3-1.4＃μ＃m光致发光

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Optical and structural properties of multilayer structures with InAs/GaAs quantum dots are investigated. It is shown that under optimal growth conditions, 1.3-1.4 #mu#m emission can be achieved. Possible scenarios of quantum dot behaviour evaluation are discussed in a frame of elastic theory to explain differences in optical properties of the grown structures.

机译：研究了具有InAs / GaAs量子点的多层结构的光学和结构性质。结果表明，在最佳生长条件下，可以实现1.3-1.4μm的排放。在弹性理论的框架中讨论了量子点行为评估的可能方案，以解释生长结构的光学性能差异。

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《Nanotechnology》 |2000年第4期|共4页
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V A Egorov; G E Cirlin;
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正文语种 eng
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1. 1.3-1.4 #mu#m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates [J] . V A Egorov, G E Cirlin Nanotechnology . 2000,第4期

机译：在GaAs单一和邻近衬底上生长的InAs / GaAs量子点多层结构发出的1.3-1.4＃μ＃m光致发光
2. Single quantum dot emission at telecom wavelengths from metamorphic InAs/lnGaAs nanostructures grown on GaAs substrates [J] . L. Seravalli, G. Trevisi, P. Frigeri, Applied Physics Letters . 2011,第17期

机译：GaAs衬底上生长的变质InAs / InGaAs纳米结构在电信波长处的单量子点发射
3. Strain engineering of quantum dots for long wavelength emission: Photoluminescence from self-assembled InAs quantum dots grown on GaAs(001) at wavelengths over 1.55 μm [J] . K. Shimomura, I. Kamiya Applied Physics Letters . 2015,第8期

机译：用于长波长发射的量子点的应变工程：在GaAs（001）上以超过1.55μm的波长生长的自组装InAs量子点的光致发光
4. Low-temperature Photoluminescence Studies in Epitaxially-grown GaAsN/InAs/GaAsN Quantum-Dot-In-Well Structures Emitting at 1.31μm [C] . A. Balgarkashi, M. Biswas, S. Shingh, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XIV . 2017

机译：外延生长的GaAsN / InAs / GaAsN量子点孔内结构在1.31μm处发光的低温光致发光研究
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate [O] . Bilel Azeza, Mohamed Helmi Hadj Alouane, Bouraoui Ilahi, 2015

机译：硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
7. Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates [O] . Seravalli, Luca, Trevisi, G., Frigeri, Paola, 2011

机译：GaAs衬底上生长的变质InAs / InGaAs纳米结构在电信波长处的单量子点发射

1.3-1.4 #mu#m photoluminescence emission from InAs/GaAs quantum dot multilayer structures grown on GaAs singular and vicinal substrates

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