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首页> 外文期刊>Nanotechnology >Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations
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Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operations

机译：灵活的逻辑门由兆赫动态操作的高性能基于GaAs-纳米线的MESFET组成

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摘要

High performance NOT, NAND and NOR logic gates composed of GaAs-nanowire (NW)-based metal-semiconductor field-effect transistors (MESFETs) were constructed on flexible plastics through a noble top-down route. The representative GaAs-NW-based MESFETs exhibited superior electrical characteristics such as a high mobility (～3300cm ~2V ~(- 1)s ~(- 1)), large I _(on)/I _(off) ratio (～10 ~8) and small subthreshold swing (～70mV/dec). The NOT, NAND and NOR logic gates showed a maximum voltage gain of 108 and logic swings of 97-99%. All of the logic gates successfully retained their electrical characteristics during 2000 bending cycles. Furthermore, the logic gates were well operated by square-wave signals of up to 100MHz under various strain conditions. The high performances demonstrated in this study open the way to the realization of high speed flexible logic devices.
机译：高性能的NOT，NAND和NOR逻辑门由基于GaAs纳米线（NW）的金属半导体场效应晶体管（MESFET）组成，它通过一种高贵的自上而下的路线构建在柔性塑料上。代表性的基于GaAs-NW的MESFET表现出出众的电气特性，例如高迁移率（〜3300cm〜2V〜（-1）s〜（-1）），大的I _（on）/ I _（off）比（〜 10〜8）和小的亚阈值摆幅（〜70mV / dec）。 NOT，NAND和NOR逻辑门的最大电压增益为108，逻辑摆幅为97-99％。在2000个弯曲周期内，所有逻辑门均成功地保留了其电气特性。此外，在各种应变条件下，逻辑门通过高达100MHz的方波信号都能很好地工作。这项研究中展示的高性能为实现高速灵活逻辑器件开辟了道路。

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