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首页> 外文期刊>Nanotechnology >Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots
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Focused ion beam modification of surfaces for directed self-assembly of InAs/GaAs(001) quantum dots

机译：表面聚焦离子束修饰，用于InAs / GaAs（001）量子点的定向自组装

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摘要

Controlled nucleation of InAs quantum dots has been achieved by Ga+ focused ion beam modification of GaAs(100) surfaces. Quantum dots may be induced in irradiated regions despite the fact that the deposited thickness is less than the critical thickness for their formation under typical growth conditions when the ion dose is greater than 10(13) ions cm(-2). We also find that the dot density increases with increasing ion dose, and reaches saturation for D > 1014 ions cm(-2). Parameters such as dot height and diameter are unaffected by the dose level. Thus, we show that the increase in dot density is a result of diffusion of adatoms from outside the patterned region. The mechanism for enhanced quantum dot formation is due to the formation of monolayer deEP 4holes created in the substrate by the ion beam, which may be used to form regular arrays of quantum dots.
机译：通过对GaAs（100）表面进行Ga +聚焦离子束修饰，可以实现InAs量子点的受控成核。尽管当离子剂量大于10（13）离子cm（-2）时，在典型的生长条件下，沉积厚度小于其形成所必需的临界厚度，但仍可能在受辐照的区域中诱发量子点。我们还发现，点密度随着离子剂量的增加而增加，并在D> 1014离子cm（-2）时达到饱和。诸如点高和直径之类的参数不受剂量水平的影响。因此，我们表明，点密度的增加是来自构图区域外部的原子扩散的结果。增强量子点形成的机理归因于离子束在基板中形成的单层deEP 4孔的形成，该孔可用于形成量子点的规则阵列。

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