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Lithography of high spatial density biosensor structures with sub-100 nm spacing by MeV proton beam writing with minimal proximity effect

机译:通过MeV质子束写入以最小的邻近效应对间距小于100 nm的高空间密度生物传感器结构进行光刻

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摘要

Metal electrode structures for biosensors with a high spatial density and approx 85 nm gaps have been produced using focused megaelectronvolt (MeV) proton beam writing of poly-(methyl methacrylate) positive resist combined with metal lift-off. The minimal proximity exposure and straight proton trajectories in (approx 100 nm) resist layers for focused MeV proton beam writing are strongly indicative that ultimate electrode gap widths approaching a few nanometres are achievable.
机译:使用聚甲基丙烯酸甲酯正性抗蚀剂的聚焦兆电子伏(MeV)质子束写入结合金属剥离技术,已经生产出具有高空间密度和约85 nm间隙的生物传感器金属电极结构。用于聚焦MeV质子束写入的(约100 nm)抗蚀剂层中的最小接近曝光和直质子轨迹强烈表明,最终电极间隙宽度可以达到几纳米。

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