Thermal evolution and photoluminescence properties of nanometric Si layers

S BONINELLI; F IACONA; G FRANZO

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Thermal evolution and photoluminescence properties of nanometric Si layers

机译：纳米硅层的热演化和光致发光特性

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The structural properties of an ultrathin (3 nm) Si layer sandwiched between two thin SiO_2 layers subjected to thermal annealing have been investigated by energy filtered transmission electron microscopy (EFTEM). It has been demonstrated that the first stages of the thermal evolution of the Si layer involve the formation of a highly interconnected Si network, followed by the appearance of well defined nanoclusters (both amorphous and crystalline). The quantitative analysis of the EFTEM data allowed determination of the size and density of the Si nanoclusters, as well as their crystalline fraction. This information has been used to explain the dependence of the system photoluminescence on the annealing temperature.

机译：通过能量过滤透射电子显微镜（EFTEM）研究了夹在两个经过热退火的SiO_2薄层之间的超薄（3 nm）Si层的结构特性。已经证明，Si层的热演化的第一阶段涉及形成高度互连的Si网络，随后出现定义良好的纳米团簇（非晶和结晶）。 EFTEM数据的定量分析可以确定Si纳米团簇的大小和密度，以及它们的结晶分数。该信息已用于解释系统光致发光对退火温度的依赖性。

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《Nanotechnology》 |2005年第12期|共5页
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S BONINELLI; F IACONA; G FRANZO;
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机译：纳米硅层的热演化和光致发光特性
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Thermal evolution and photoluminescence properties of nanometric Si layers

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