New process for high optical quality InAs quantum dots grown on patterned GaAs(00l) substrates

Pablo Alonso-Gonzalez; Luisa Gonzalez; Yolanda Gonzalez

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New process for high optical quality InAs quantum dots grown on patterned GaAs(00l) substrates

机译：在图案化的GaAs（00l）衬底上生长的高质量光学InAs量子点的新工艺

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This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

机译：这项工作提出了一种选择性的紫外线（UV）-臭氧氧化-化学蚀刻工艺，该工艺已与激光干涉光刻（LIL）结合用于制备GaAs图案化衬底。 InAs的进一步分子束外延（MBE）生长导致形成在图案化基板上的第一层QD形成具有高光学质量的有序InAs / GaAs量子点（QD）阵列。主要结果是构图技术的发展，该技术允许对QD的定制几何显示进行工程设计，其光学质量与自发形成在平坦的非构图基板上的光学质量相同。

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《Nanotechnology》 |2007年第35期|共4页
作者
Pablo Alonso-Gonzalez; Luisa Gonzalez; Yolanda Gonzalez;
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1. New process for high optical quality InAs quantum dots grown on patterned GaAs(00l) substrates [J] . Pablo Alonso-Gonzalez, Luisa Gonzalez, Yolanda Gonzalez Nanotechnology . 2007,第35期

机译：在图案化的GaAs（00l）衬底上生长的高质量光学InAs量子点的新工艺
2. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates [J] . Alonso-Gonzalez P, Gonzalez L, Gonzalez Y, Nanotechnology . 2007,第35期

机译：在图案化的GaAs（001）衬底上生长的高光学质量InAs量子点的新工艺
3. High optical quality InAs site-controlled quantum dots grown on soft photocurable nanoimprint lithography patterned GaAs substrates [J] . Chien-Chia Cheng, K. Meneou, K. Y. Cheng Applied Physicsletters . 2009,第17期

机译：在可光固化的纳米压印光刻图案化的GaAs衬底上生长的高光学质量InAs位置控制量子点
4. InAs/GaAs quantum dot single-section mode-locked lasers monolithically grown on Si (001) substrate with resonant optical feedback [C] . Zi-Hao Wang, Wen-Qi Wei, Qi Feng, Asia Communications and Photonics Conference;International Conference on Information Photonics and Optical Communications . 2020

机译：INAS / GAAS量子点单截面模式锁定的激光器在Si（001）衬底上单片生长，具有谐振光反馈
5. Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device. [D] . Dai, Yushuai. 2013

机译：InAs / GaAs量子点太阳能电池和InAs纳米线在光伏器件中的应用的光学和机械研究。
6. Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns [O] . Chalermchai Himwas, Somsak Panyakeow, Songphol Kanjanachuchai 2011

机译：InGaAs交叉影线图案上生长和退火的InAs量子点的光学性质
7. Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates [O] . Martín-Sánchez, Javier, Muñoz-Matutano, G., Herranz Zamorano, Jesús, 2009

机译：GaAs（001）图案化衬底上生长的站点控制InAs量子点的单光子发射
8. Photoluminescence Decay Time Measurements from Self-Organized InAs/GaAs Quantum Dots Grown on Misoriented Substrates. [R] . Shkolnik, A. S., Dogonkin, E. B., Evtikhiev, V. P., 2001

机译：在错误定向衬底上生长的自组织Inas / Gaas量子点的光致发光衰减时间测量。

New process for high optical quality InAs quantum dots grown on patterned GaAs(00l) substrates

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