Recent Progress on Critical Cleaning of Sapphire Single-Crystal Substrates: A Mini-Review

Dan Zhang; Yang Gan

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Recent Progress on Critical Cleaning of Sapphire Single-Crystal Substrates: A Mini-Review

机译：蓝宝石单晶衬底临界清洗的最新进展：综述。

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Sapphire single-crystals are one of the industrial favorite substrates for GaN film deposition and LED application as well as a model system for oxides' aqueous interfacial chemistry studies. Contamination control of sapphire substrates is critical to the device fabrication and experimental studies of interfacial properties. Here we reviewed various methods reported in the literature including conventional and new wet-chemical methods, and UV/plasma methods. Special attentions were paid to their cleaning performance in terms of reliably removing organic/particulate/heavy metallic contaminants.

机译：蓝宝石单晶是用于GaN膜沉积和LED应用的工业最受欢迎的衬底之一，也是用于氧化物的水界面化学研究的模型系统。蓝宝石衬底的污染控制对于器件制造和界面特性的实验研究至关重要。在这里，我们回顾了文献中报道的各种方法，包括常规和新的湿化学方法以及UV /等离子方法。在可靠地去除有机/颗粒/重金属污染物方面，对其清洁性能给予了特别关注。

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《Recent Patents on Chemical Engineering》 |2013年第3期|共6页
作者
Dan Zhang; Yang Gan;
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正文语种 eng
中图分类化学工业;
关键词
Contamination control; Sapphire; Surface chemistry; Surface structure; UV/plasma cleaning methods; Wet-chemical cleaning methods.;

机译：污染控制;蓝宝石;表面化学;表面结构;UV /等离子清洁方法;湿化学清洁方法;

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专利

1. Recent Progress on Critical Cleaning of Sapphire Single-Crystal Substrates: A Mini-Review [J] . Dan Zhang, Yang Gan Recent Patents on Chemical Engineering . 2013,第3期

机译：蓝宝石单晶衬底临界清洗的最新进展：综述。
2. Effects of plasma treatment on evolution of surface step-terrace structure of critically cleaned c-plane sapphire substrates: An AFM study [J] . Dan Zhang, Yang Gan Applied Surface Science . 2013,第PtaB期

机译：等离子体处理对严格清洁的c面蓝宝石衬底表面阶梯形结构演变的影响：AFM研究
3. Epitaxial single-crystal of GaSe epilayers grown on a c-sapphire substrate by molecular beam epitaxy [J] . Chia-Hsin Wu, Chu-Shou Yang, Yen-Chi Wang, Physica status solidi . 2015,第10期

机译：通过分子束外延在c蓝宝石衬底上生长的GaSe外延层的外延单晶
4. Formation of Ti:sapphire thin films on single-crystal sapphire and GaAs substrates by pulsed laser deposition [C] . Author(s): Peter A. Atanasov Institute of Electronics Sofia Bulgaria, Rumen I. Tomov Institute of Electronics Sofia Bulgaria, Zachary Y. Peshev Institute of Electronics Sofia Bulgaria, Laser Applications in Microelectronic and Optoelectronic Manufacturing II . 1997

机译：通过脉冲激光沉积在单晶蓝宝石和GaAs衬底上形成Ti：蓝宝石薄膜
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition [O] . Chunyang Jia, Dae-Woo Jeon, Jianlong Xu, 2020

机译：金属有机化学气相沉积法在蓝宝石衬底上催化剂辅助大面积生长单晶β-Ga2O3纳米线
7. Single-Crystal like MgB2thin films grown on c-cut sapphire substrates [O] . Pham Van Duong, Mahipal Ranot, Won Nam Kang 2014

机译：像MgB2那样在C-Cut蓝宝石基材上生长的单晶

Recent Progress on Critical Cleaning of Sapphire Single-Crystal Substrates: A Mini-Review

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