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首页> 外文期刊>RSC Advances >Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process
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Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

机译：通过室温，电化学氧化工艺制备的具有高可靠性栅极绝缘体的柔性有机场效应晶体管

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摘要

Flexible organic field-effect transistors (OFETs) with electrochemically oxidized gate insulators (AlOx:Nd) covered by a thin layer of hydroxyl-free poly(perfluorobutenylvinylether) known as Cytop were fabricated on a polyethylene naphthalate (PEN) substrate. The AlOx:Nd/Cytop bilayer insulator exhibited excellent insulating properties with low leakage current, high dielectric constant, high breakdown field, and low surface roughness. The pentacene film on AlOx:Nd without Cytop consisted of small grains, while the one on AlOx:Nd with Cytop exhibited a dendritic structure with a larger average grain size of similar to 350 nm. The pentacene OFET with Cytop exhibited higher mobility (0.75 cm(2) V-1 s(-1)) and better electrical stability under gate-bias-stress (in air condition) compared to that without Cytop. In addition, the flexible OFET was able to maintain a relatively stable performance under a certain degree of bending.
机译：在聚萘二甲酸乙二醇酯（PEN）基板上制造了柔性有机场效应晶体管（OFET），该晶体管具有被一层无羟基的聚全氟丁烯基乙烯基醚Cytop薄层覆盖的电化学氧化的栅极绝缘体（AlOx：Nd）。 AlOx：Nd / Cytop双层绝缘子表现出优异的绝缘性能，具有低漏电流，高介电常数，高击穿场和低表面粗糙度。没有Cytop的AlOx：Nd上的并五苯薄膜由小晶粒组成，而具有Cytop的AlOx：Nd上的并五苯薄膜显示出树枝状结构，其平均晶粒尺寸较大，接近350 nm。与没有Cytop相比，具有Cytop的并五苯OFET表现出更高的迁移率（0.75 cm（2）V-1 s（-1））和更好的电稳定性。另外，柔性的OFET能够在一定程度的弯曲下保持相对稳定的性能。

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