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首页> 外文期刊>Sensors and Actuators, A. Physical >Measurement of the temperature coefficient of Young's modulus of single crystal silicon and 3C silicon carbide below 273 K using micro-cantilevers
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Measurement of the temperature coefficient of Young's modulus of single crystal silicon and 3C silicon carbide below 273 K using micro-cantilevers

机译：使用微悬臂梁在273 K以下测量单晶硅和3C碳化硅的杨氏模量的温度系数

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摘要

This paper reports on the measurement of the thermal coefficient of Young's modulus of both single crystal silicon and 3C silicon carbide over the temperature range spanning 200-290 K. The thermal coefficients were determined by monitoring the change of resonance frequency of micro-cantilevers as their temperature was reduced. The thermal coefficient of Young's modulus, 1/E · δE/δT was measured to be -52.6 ± 3.45 ppm/K for silicon and -39.8 ± 5.99 ppm/K for 3C silicon carbide, agreeing well with theoretical predictions, and also with experimental values that have been previously published for temperatures above 273 K. This work has therefore expanded the temperature range over which the thermal coefficient of Young's modulus has been measured to below 273 K and towards the temperatures required for low-temperature military and space applications.
机译：本文报道了在200-290 K的温度范围内对单晶硅和3C碳化硅的杨氏模量的热系数的测量。通过监测微悬臂梁的共振频率的变化来确定热系数。温度降低。杨氏模量的热系数1 / E·δE/δT对硅测量为-52.6±3.45 ppm / K，对3C碳化硅测量为-39.8±5.99 ppm / K，与理论预测和实验均相符先前已针对温度超过273 K公布了这些值。因此，这项工作将测量杨氏模量热系数的温度范围扩展到了273 K以下，并达到了低温军事和太空应用所需的温度。

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