Transport Parameters and Optical Properties of Selectively Doped Ga(Al)As/Zn(Mn)Se Heterovalent Structures with a Two-Dimensional Hole Channel

E. A. Evropeytsev; G. V. Klimko; T. A. Komissarova; I. V. Sedova; S. V. Sorokin; S. V. Gronin; D. Yu. Kazantsev; B. Ya. Ber; S. V. Ivanov; A. A. Toropov

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Transport Parameters and Optical Properties of Selectively Doped Ga(Al)As/Zn(Mn)Se Heterovalent Structures with a Two-Dimensional Hole Channel

机译：带有二维空穴通道的选择性掺杂Ga（Al）As / Zn（Mn）Se异质结构的输运参数和光学性质

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The growth of III-V/II-VI:Mn heterostructures with a high hole concentration in the AlGaAs:Be/GaAs/AlGaAs 2D channel situated in the immediate vicinity of the AlGaAs/Zn(Mn)Se het- erovalent interface by molecular-beam epitaxy is reported. Despite the decrease in the hole concentration in the GaAs channel upon a decrease in the distance between the channel and the heterovalent interface, the hole concentration reaches a value of 1.5 × 10~(13) cm~(-2) at a temperature of 300 K even at the minimum distance of 1.2 nm. Deep profiling by dynamic secondary-ion mass spectrometry confirmed the back diffusion of Mn from ZnMnSe into the III-V part. High hole concentration and the presence of magnetic manganese ions in the GaAs conduction channel determine the interest in the structures as possible objects in which the effect of magnetic ordering in heterogeneous semiconductor systems can be studied.

机译：AlGaAs：Be / GaAs / AlGaAs 2D通道中紧邻AlGaAs / Zn（Mn）Se异价界面的Al-V / II-VI：Mn异质结构具有高空穴浓度的生长通过分子-据报道束外延。尽管GaAs通道中的空穴浓度随着通道与异价界面之间距离的减小而降低，但在300℃的温度下，空穴浓度仍达到1.5×10〜（13）cm〜（-2）的值。即使在最小距离为1.2 nm时也为K。通过动态二次离子质谱仪进行的深层分析证实了Mn从ZnMnSe向III-V部分的反向扩散。 GaAs导电通道中的高空穴浓度和磁性锰离子的存在决定了人们对结构的关注，因为它们可能是研究异质半导体系统中磁有序效应的可能对象。

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《Semiconductors》 |2014年第1期|共4页
作者
E. A. Evropeytsev; G. V. Klimko; T. A. Komissarova; I. V. Sedova; S. V. Sorokin; S. V. Gronin; D. Yu. Kazantsev; B. Ya. Ber; S. V. Ivanov; A. A. Toropov;
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正文语种 eng
中图分类半导体物理学;
关键词
Transport; Properties; Channel;

机译：运输;物业;渠道;

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1. Transport Parameters and Optical Properties of Selectively Doped Ga(Al)As/Zn(Mn)Se Heterovalent Structures with a Two-Dimensional Hole Channel [J] . E. A. Evropeytsev, G. V. Klimko, T. A. Komissarova, Semiconductors . 2014,第1期

机译：带有二维空穴通道的选择性掺杂Ga（Al）As / Zn（Mn）Se异质结构的输运参数和光学性质
2. Negative photoconductivity of selectively doped SiGe/Si : B heterostructures with a two-dimensional hole gas in the middle-infrared range [J] . Antonov AV, Aleshkin VY, Gavrilenko VI, Physics of the solid state . 2005,第1期

机译：在中红外范围内具有二维空穴气体的选择性掺杂SiGe / Si：B异质结构的负光电导性
3. Synthesis and dual-channel optical properties of Mn-doped ZnSe quantum dots [J] . Yu Ji Soo, Kim Sung Hun, Minh Tan Man, Materials Letters . 2019,第Octa15期

机译：Mn掺杂ZnSe量子点的合成及双通道光学性质
4. Preparation, Structure, Optical and Morphological Properties of Co, Ga_2O_3 Co-Doped ZnS/Se [C] . Yong Pan, Li Wang, Dong Wen Gao, International Conference on Sensors, Materials and Manufacturing;International Conference on Materials Sciences and Nanomaterials;International Conference on Materials and Intelligent Manufacturing . 2019

机译：Co，Ga_2O_3共掺杂ZnS / Se的制备，结构，光学和形态学性质
5. Development of wide bandgap II--VI materials for visible lasers and light emitting diodes. A. Bipolar doping and electroluminescence of ZnMgCdSe structures. B. Hexagonal ZnSe-based structures [D] . Lin, Wei-Cheng Wilson 2000

机译：开发用于可见光激光器和发光二极管的宽带隙II-VI材料。 A. ZnMgCdSe结构的双极掺杂和电致发光。 B.六角形ZnSe基结构
6. Mn Doped AZIS/ZnS Nanocrystals (NCs): Effects of Ag and Mn Levels on NC Optical Properties [O] . Masoumeh Saber Zaeimian, Brandon Gallian, Clay Harrison, -1

机译：锰掺杂的AZIS / ZnS纳米晶体（NCs）：Ag和Mn含量对NC光学性能的影响
7. High-mobility two-dimensional hole gases in III-V semiconductor heterostructures: growth and transport properties [O] . Hirmer Marika 2013

机译：III-V半导体异质结构中的高迁移率二维空穴气体：生长和传输性质

Transport Parameters and Optical Properties of Selectively Doped Ga(Al)As/Zn(Mn)Se Heterovalent Structures with a Two-Dimensional Hole Channel

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