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Silicon oxide buffer layer at the p-i interface in amorphous and microcrystalline silicon solar cells

机译:非晶硅和微晶硅太阳能电池中p-i界面处的氧化硅缓冲层

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摘要

The use of intrinsic silicon oxide as a buffer layer at the p-i interface of thin-film silicon solar cells is shown to provide significant advantages. For microcrystalline silicon solar cells, when associated with highly crystalline i-Iayers deposited at high rates, all electrical parameters are improved. Larger efficiency gains are achieved with substrates of increased roughness. For cells with an improved i-layer material quality, there is mainly a gain in short-circuit current density. An improvement in carrier collection in the blue region of the spectrum is systematically observed on all the cells. The presence of a silicon oxide buffer layer also promotes the nucleation of the subsequent intrinsic microcrystalline silicon layer. In amorphous silicon solar cells, the silicon oxide buffer layer is proven to act as an efficient barrier to boron cross-contamination, eliminating the need for additional processing steps (e.g. water vapor flush), while providing a wide bandgap material at the interface. The implementation of silicon oxide buffer layers for both types of cells thus provides a decisive improvement, as it allows extremely fast deposition of the full p-i-n stack of layers of the cell in a single-chamber configuration while providing a high-quality substrate-resilient p-i interface.
机译:显示出使用本征氧化硅作为薄膜硅太阳能电池的p-i界面的缓冲层具有明显的优势。对于微晶硅太阳能电池,当与高速率沉积的高结晶i-Iayers结合时,所有电参数都会得到改善。粗糙度增加的基板可实现更大的效率增益。对于具有改进的i层材料质量的电池而言,短路电流密度主要得到提高。在所有细胞上系统地观察到光谱的蓝色区域中载流子收集的改善。氧化硅缓冲层的存在还促进了随后的本征微晶硅层的成核。在非晶硅太阳能电池中,氧化硅缓冲层被证明可有效防止硼交叉污染,从而消除了对附加处理步骤(例如水蒸气冲洗)的需要,同时在界面处提供了带隙较宽的材料。两种类型的电池均采用氧化硅缓冲层,因此具有决定性的改进,因为它可以在单腔室配置中以极快的速度沉积电池的整个引脚堆叠,同时提供高质量的基板弹性pi接口。

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