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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Statistical analysis of local shunts and their relationship with minority-carrier lifetime in multi-crystalline silicon solar cells
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Statistical analysis of local shunts and their relationship with minority-carrier lifetime in multi-crystalline silicon solar cells

机译:多晶硅太阳能电池局部分流的统计分析及其与少数载流子寿命的关系

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摘要

Local shunts in multi-crystalline Si solar cells were investigated statistically using minutely meshed mesa diodes fabricated on commercially available cells. The dark reverse current density J(dr) in each mesa varied in a wide range of 10(-9)-1 A/cm(2), which showed that local shunts over n(+) -p junction distributed spatially. The histogram of J(dr) was analyzed to clarify cell performances, and a critical value of J(dr) was proposed to classify the cell efficiency. Minority-carrier lift time estimated using transient behavior of switching current was also discussed relating with the material quality. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 5]
机译:使用在市售电池上制造的细网眼台面二极管,对多晶硅硅太阳能电池中的局部分流进行了统计研究。每个台面中的暗反向电流密度J(dr)在10(-9)-1 A / cm(2)的宽范围内变化,这表明n(+)-p结上的局部分流在空间上分布。分析了J(dr)的直方图以阐明电池性能,并提出了J(dr)的临界值以对电池效率进行分类。还讨论了使用开关电流的瞬态行为估算的少数载流子提升时间,并与材料质量相关。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:5]

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