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首页> 外文期刊>Superconductor Science & Technology >MOD approach for the growth of epitaxial CeO_2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors
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MOD approach for the growth of epitaxial CeO_2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors

机译：MOD方法在YBCO涂层导体的双轴织构Ni-W衬底上生长外延CeO_2缓冲层

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摘要

We have grown epitaxial CeO_2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni-3 at percent W (Ni-W) substrates and heat-treated at 1100 deg C in a gas mixture of Ar-4 percent H_2 for 15 min. Detailed x-ray studies indicate that CeO_2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8 deg and 7.5 deg, respectively. High temperature in situ XRD studies show that the nucleation of CeO_2 films starts at 600 deg C and the growth completes within 5 min when heated at 1100 deg C. SEM and AFM investigations of CeO_2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO_2 cap layers were deposited on MOD CeO_2-buffered Ni-W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, J_c, of about 1.5 MA cm~(-2) at 77 K and self-field was obtained on YBCO (PLD)/CeO_2 (sputtered)/YSZ (sputtered)/CeO_2 (spin-coated)/Ni-W.
机译：我们已经使用新开发的金属有机分解（MOD）方法在用于YBCO涂层的导体的双轴织构Ni-W衬底上生长了外延CeO_2缓冲层。将浓度为0.25 M的前体溶液旋涂在较短的Ni-3样品上，样品含量为W（Ni-W），并在Ar-4％H_2的混合气体中于1100℃热处理15分钟。详细的X射线研究表明CeO_2薄膜具有良好的面外和面内纹理，其半峰全宽最大值分别为5.8度和7.5度。高温原位X射线衍射研究表明CeO_2薄膜的成核始于600摄氏度，在1100摄氏度加热时5分钟内生长完成。SEM和AFM研究CeO_2薄膜显示出相当致密的微观结构，没有裂纹和孔隙。使用射频磁控溅射在MOD CeO_2缓冲的Ni-W衬底上沉积高度织构化的YSZ势垒层和CeO_2盖层。脉冲激光沉积（PLD）用于在这些基板上生长YBCO膜。在YBCO（PLD）/ CeO_2（溅射）/ YSZ（溅射）/ CeO_2（旋涂）/ Ni-上获得了在77 K时约1.5 MA cm〜（-2）和自电场的临界电流J_c。 W.

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