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首页> 外文期刊>Superconductor Science & Technology >Ultrathin MgB_2 films fabricated on Al_2O_3 substrate by hybrid physical-chemical vapor deposition with high T_c and J_c
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Ultrathin MgB_2 films fabricated on Al_2O_3 substrate by hybrid physical-chemical vapor deposition with high T_c and J_c

机译:高T_c和J_c混合物理化学气相沉积法在Al_2O_3衬底上制备超薄MgB_2薄膜。

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摘要

Ultrathin MgB_2 superconducting films with a thickness down to 7.5 nm are epitaxially grown on (0001) Al_2O_3 substrate by a hybrid physical-chemical vapor deposition method. The films are phase-pure, oxidation-free and continuous. The 7.5 nm thin film shows a Tc(0) of 34 K, which is so far the highest T_c(0) reported in MgB_2 with the same thickness. The critical current density of ultrathin MgB _2 films below 10 nm is demonstrated for the first time as J c ~ 106 A cm~(-2) for the above 7.5 nm sample at 16 K. Our results reveal the excellent superconducting properties of ultrathin MgB _2 films with thicknesses between 7.5 and 40 nm on Al _2O_3 substrate.
机译:通过混合物理化学气相沉积法在(0001)Al_2O_3衬底上外延生长厚度低至7.5 nm的超薄MgB_2超导膜。该膜是纯相,无氧化和连续的。 7.5 nm薄膜的Tc(0)为34 K,这是迄今为止MgB_2中具有相同厚度的最高T_c(0)。 MgB _2薄膜在10 nm以下的临界电流密度首次被证明是在7.5 nm样品在16 K时的J c〜106 A cm〜(-2)。我们的结果表明,超薄MgB具有出色的超导性能。 Al _2O_3衬底上的_2膜厚度在7.5和40 nm之间。

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