Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities

P. Stallinga; H.L. Gomes

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Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities

机译：薄膜场效应晶体管的电特性建模II：陷阱和杂质的影响

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Based on a new model for thin-film field-effect transistors, in which the active layer is treated as purely two-dimensional, the effects of impurities on the electrical characteristics are discussed. Localized electronic levels are introduced into the model. It is shown that the presence of traps readily accounts for the non-linearities in the current-voltage curves. Trap states can also explain the temperature dependence of the current and mobility, including the so-called Meyer-Neldel Rule. Finally, transients are qualitatively discussed.

机译：基于薄膜场效应晶体管的新模型，其中有源层被视为纯二维，讨论了杂质对电特性的影响。本地化的电子水准仪被引入模型。结果表明，陷阱的存在很容易解决电流-电压曲线中的非线性问题。陷阱状态还可以解释电流和迁移率对温度的依赖性，包括所谓的迈耶-内德尔定律。最后，定性讨论了瞬态。

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《Synthetic Metals》 |2006年第24期|共11页
作者
P. Stallinga; H.L. Gomes;
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原文格式 PDF
正文语种 eng
中图分类工程材料学;
关键词
Thin-film field effect transistors; Amorphous silicon; Organic semiconductors; Traps;

机译：薄膜场效应晶体管;非晶硅;有机半导体;陷阱;

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1. Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities [J] . P. Stallinga, H.L. Gomes Synthetic Metals . 2006,第21a24期

机译：薄膜场效应晶体管的电特性建模II：陷阱和杂质的影响
2. Modeling The Electrical Characteristics Of Tips-pentacene Thin-film Transistors: Effect Of Contact Barrier, Field-dependent Mobility, And Traps [J] . Dipti Gupta, Namho Jeon, Seunghyup Yoo Organic Electronics . 2008,第6期

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3. Thin-film field-effect transistors: The effects of traps on the bias and temperature dependence of field-effect mobility, including the Meyer-Neldel rule [J] . Stallinga P, Gomes HL Organic Electronics . 2006,第6期

机译：薄膜场效应晶体管：陷阱对场效应迁移率的偏置和温度依赖性的影响，包括Meyer-Neldel规则
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Modeling electrical characteristics of thin-film field-effect transistors II: Effects of traps and impurities

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