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首页> 外文期刊>Physics in Canada >ELECTROSTATIC GATING OF THE SUPERCONDUCTING STATE AT OXIDE INTERFACES
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ELECTROSTATIC GATING OF THE SUPERCONDUCTING STATE AT OXIDE INTERFACES

机译：氧化物界面上超导状态的静电门

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摘要

Apowerful driving force behind the information and communication technology revolution we have witnessed in the last decades is the ability to control on-demand the electronic properties of a material. The best example is the field-effect transistor, a device whose ability to conduct an electrical current can be extensively qontrolled by applying an electric field. Several hundred million of these devices operate in one pocket, closely packed inside a smartphone. This functionality is made possible by the creation of an interface between two materials, a semiconductor and an insulator, that in their bulk form do not offer useful properties. It is the interface which generates the functionality. An exciting opportunity, opened by recent advances in material science, is to study interfaces and surfaces of quantum materials that even in their bulk exhibit functional properties such as magnetism or superconductivity [1].Indeed, there is great potential for new electronic properties at their interfaces.
机译：在过去的几十年中，我们见证了信息和通信技术革命背后的强大动力，即能够按需控制材料的电子特性。最好的例子是场效应晶体管，该器件的传导电流的能力可以通过施加电场来广泛地控制。这些设备中的亿万个都装在一个口袋里，紧密地装在智能手机中。通过在两种材料（半导体和绝缘体）之间创建界面，使这种功能成为可能，而这两种材料的整体形式不提供有用的属性。正是界面生成了功能。材料科学的最新进展为研究量子材料的界面和表面提供了一个激动人心的机会，即使它们的整体也具有磁性或超导性等功能特性[1]。实际上，在它们的新电子特性方面具有巨大的潜力。接口。

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