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首页> 外文期刊>Philosophical Magazine Letters >Structure of twins in GaAs nanowires grown by the vapour-liquid-solid process
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Structure of twins in GaAs nanowires grown by the vapour-liquid-solid process

机译：蒸气-液-固过程生长的GaAs纳米线中的孪晶结构

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摘要

GaAs nanowires have been grown on single-crystal (001) Si and GaAs substrates using the vapour-liquid-solid (VLS) mechanism in a MOCVD chamber. These nanowires typically exhibited a circular cross-section with diameters in the range 10-40 nm. They contain a large density of growth twins that are here investigated in detail using transmission electron microscopy and high-resolution electron microscopy. Results indicate that the wires predominantly have the zinc blende diamond cubic structure with the growth axis parallel to [111] and twins perpendicular to the growth axis. In many cases, multiple twins tend to cluster in groups along the length of the nanowires, either in a near- periodic fashion or on consecutive {111} planes, resulting in the formation of local regions exhibiting the hexagonal wurtzite structure of GaAs. The small difference in energy between these two forms of GaAs is likely to be the reason for the coexistence of both zinc blende and wurtzite structures within the same nanowire.
机译：GaAs纳米线已在MOCVD腔室中使用气液固（VLS）机制在单晶（001）Si和GaAs衬底上生长。这些纳米线通常表现出直径在10-40nm范围内的圆形横截面。它们包含高密度的生长孪生子，在此使用透射电子显微镜和高分辨率电子显微镜进行详细研究。结果表明，金属丝主要具有锌混合金刚石立方结构，其生长轴平行于[111]，而孪晶垂直于生长轴。在许多情况下，多个孪晶倾向于以近周期性或连续的{111}平面的形式沿纳米线的长度成簇聚集，导致形成具有GaAs六方纤锌矿结构的局部区域。这两种形式的GaAs之间的能量差异很小，可能是同一纳米线中锌共混物和纤锌矿结构两者共存的原因。

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