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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering
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Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering

机译：射频磁控溅射在硅上生长的钛酸钡（BaTiO3）薄膜的性能

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Thin films of BaTiO3 were deposited on p-Si substrates by rf magnetron sputtering in order to investigate their suitability for use in ac thin film electroluminescent (ACTFEL) devices and dynamic RAM (DRAM) applications. Post-growth annealing at 700 degrees C and the subsequent deposition of Al contacts resulted in the creation of Al/BaTiO3/p-Si metal-insulator-semiconductor devices. The electronic and structural properties of the films were examined by admittance spectroscopy, current-voltage and transient current measurements, and X-ray diffraction (XRD) characterization. Analysis of the XRD spectra showed the polycrystalline nature of the films but also the presence of an amorphous phase. The electrical measurements revealed a high dielectric constant, around 60, a charge storage capacity exceeding 3 mu C cm(-2) and a total charge trapped inside the oxide of around 50 nC cm(-2) while the density of traps at the BaTiO3/p-Si interface was found to be as high as 1 x 10(12) cm(-2) eV(-1) These results indicate that the films are suitable for both DRAM and ACTFEL applications. [References: 20]
机译：为了研究其在ac薄膜电致发光（ACTFEL）器件和动态RAM（DRAM）应用中的适用性，通过射频磁控溅射将BaTiO3薄膜沉积在p-Si衬底上。在700摄氏度的生长后退火以及随后的Al触点沉积导致产生了Al / BaTiO3 / p-Si金属-绝缘体-半导体器件。通过导纳光谱，电流-电压和瞬态电流测量以及X射线衍射（XRD）表征检查了薄膜的电子和结构性能。 XRD光谱的分析显示了膜的多晶性质，但也存在非晶相。电学测量表明，介电常数高，约为60，电荷存储容量超过3μC cm（-2），在氧化物内部俘获的总电荷约为50 nC cm（-2），而BaTiO3处的俘获密度为发现/ p-Si界面高达1 x 10（12）cm（-2）eV（-1）。这些结果表明该膜适用于DRAM和ACTFEL应用。 [参考：20]

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