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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Gap states in diamond-like amorphous carbon
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Gap states in diamond-like amorphous carbon

机译：类金刚石无定形碳中的能隙态

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摘要

The electronic structure of amorphous diamond-like carbon is reviewed. The sp(2) sites form small, mainly chain-like clusters which control the bandgap. Detailed analysis shows that all pi states within the sigma-sigma* gap are all localized; so the mobility gap greatly exceeds the optical gap. This accounts for the photoluminescence excitation spectrum. Dangling-bond states are calculated to possess some s orbital character, which lowers their energy level in the gap and accounts for the p-type conduction of tetrahedral amorphous carbon. The defect density is high in hydrogenated amorphous carbon and is found to be fairly well described by the weak-bond-dangling-bond conversion model. The photoluminescence mechanism is described and it is argued that the paramagnetic defects are still the most likely dominant recombination centre.
机译：综述了非晶态类金刚石碳的电子结构。 sp（2）位点形成小的，主要是链状的簇，它们控制带隙。详细的分析表明，在sigma-sigma *间隙内的所有pi状态都已局部化;因此迁移率间隙大大超过了光学间隙。这解释了光致发光激发光谱。悬挂键态经计算具有一定的s轨道特性，从而降低了它们在能隙中的能级并解释了四面体无定形碳的p型传导。氢化非晶碳中的缺陷密度很高，并且通过弱键-悬挂键转换模型可以很好地描述缺陷密度。描述了光致发光机理，并认为顺磁缺陷仍然是最可能的主要复合中心。

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