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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500 degrees C
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Amorphous and microcrystalline silicon films obtained by hot-wire chemical vapour deposition using high filament temperatures between 1900 and 2500 degrees C

机译：通过在1900到2500摄氏度之间的高灯丝温度通过热线化学气相沉积获得的非晶和微晶硅膜

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摘要

The effects of hydrogen dilution and substrate temperature on the optical, transport and structural properties of silicon thin films deposited by hot-wire chemical vapour deposition using filament temperatures between 1900 and 2500 degrees C are reported. Amorphous silicon films with a Tauc bandgap of 1.65 eV, a photoconductivity-to-dark-conductivity ratio above 10(5), a deep defect density of 10(16) cm(-3), an Urbach energy of 55 meV and a structure factor R approximate to 0.2 were prepared with deposition rates up to 40 Angstrom s(-1) for hydrogen dilutions below 80%. The best properties were obtained for undiluted films deposited at a substrate temperature of 220 degrees C. For hydrogen dilutions above 80%, microcrystalline films were obtained with low growth rates (below 3 Angstrom s(-1)) for all substrate temperatures studied (between 100 and 400 degrees C) regardless of the filament temperature. The Raman spectra show a high crystalline fraction and a small grain size. In this filament temperature regime, the growth mechanism and film properties are controlled by the high flux of atomic hydrogen.
机译：报道了氢稀释和衬底温度对通过使用在1900和2500℃之间的灯丝温度的热线化学气相沉积而沉积的硅薄膜的光学，传输和结构性质的影响。 Tauc带隙为1.65 eV，光导与暗电导比高于10（5），深缺陷密度为10（16）cm（-3），Urbach能量为55 meV的非晶硅膜和结构对于低于80％的氢稀释，准备了约0.2的系数R，沉积速率高达40埃s（-1）。对于在220摄氏度的基板温度下沉积的未稀释薄膜，可获得最佳性能。对于氢稀释度超过80％的情况，对于所有研究的基板温度（介于1至2摄氏度之间），微晶薄膜的生长速率均较低（低于3埃（-1））。 100和400摄氏度），而与灯丝温度无关。拉曼光谱显示出高的晶体分数和小的晶粒尺寸。在这种灯丝温度范围内，生长机理和膜性能由原子氢的高通量控制。

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