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首页> 外文期刊>Philosophical magazine, B. Physics of condensed matter, electronic, optical, and magnetic properties >Short-range order and luminescence in amorphous silicon oxynitride
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Short-range order and luminescence in amorphous silicon oxynitride

机译：非晶氮氧化硅中的短程有序和发光

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Using Si2p core-level X-ray photoelectron spectroscopy, we found that the short-range order in amorphous silicon oxynitride (a-SiOxNy) can be quantitatively described by a random bonding model. Results also show that the second and even further neighbours of the Si in the network affect the chemical shifts of the X-ray photoelectron spectra. Cathodoluminescence and photoluminescence of a-SiOxNy with different compositions are also measured. A red band with energies of 1.8-1.9 eV, a blue band with an energy of 2.7 eV and ultraviolet bands with energies of 13.1, 3.4-3.6, 4.4-4.7 and 5.4eV were observed. The 1.8-1.9 eV band is attributed to the O and N atoms with an unpaired electron and the 2.7 eV band is attributed to the twofoId-coordinated Si atom with two electrons (sililene centre). The ultraviolet bands are assumed to be related in the Si-Si bonds. [References: 31]
机译：使用Si2p核能级X射线光电子能谱，我们发现非晶氧氮化硅（a-SiOxNy）的短程顺序可以通过随机键合模型定量描述。结果还表明，网络中Si的第二个甚至更多邻域会影响X射线光电子能谱的化学位移。还测量了具有不同组成的α-SiOxNy的阴极发光和光致发光。观察到能量为1.8-1.9 eV的红色带，能量为2.7 eV的蓝色带和能量为13.1、3.4-3.6、4.4-4.7和5.4eV的紫外线带。 1.8-1.9 eV的谱带归因于具有不成对电子的O和N原子，而2.7 eV的谱带归因于具有两个电子的双原子配位的Si原子（甲硅烷基中心）。假定紫外线带与Si-Si键相关。 [参考：31]

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