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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Characterisation and comparison of GaN grown by MBE and MOVPE
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Characterisation and comparison of GaN grown by MBE and MOVPE

机译:MBE和MOVPE生长的GaN的表征和比较

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GaN grown by MBE is characterised and compared with a high-quality MOVPE-grown GaN-sample. The concentration of oxygen in the MBE-material was found to be 3.1 x 10(18) atoms /cm(3) compared to 4.1 x 10(18) atoms/cm(-3) for GaN grown by MOVPE. The MOVPE-sample had twice as high carbon concentration as the MBE-grown layer. GaN grown by MBE shows high concentrations of unintentional arsenic, 1.1 x 1018 atoms /cm(3), and boron, 3.0 x 10(17) 17 atoms/cm(3),where the boron incorporation shows a dependence on the power of the plasma source. Using XRD, the Q-rocking curve FWHM of the symmetric [0002] and asymmetric [10 (1) over bar 5] reflections for the MBE-material were above 1200 arcsec as compared to about a factor of three lower values for GaN grown by MOVPE. Photoluminescence emission from both materials shows a strain-shifted shallow donor bound exciton at 3.48 eV and a shallow acceptor with LO phonon replicas at 3.27,3.18 and 3.09 eV, respectively. Emission due to a 2DEG was seen from the MBE-sample. Three unknown peaks were seen at 2.82, 2.99 and 3.42 eV from GaN grown by MBE. [References: 15]
机译:用MBE生长的GaN进行了表征,并与高质量的MOVPE生长的GaN样品进行了比较。发现MBE材料中的氧气浓度为3.1 x 10(18)原子/ cm(3),而MOVPE生长的GaN为4.1 x 10(18)原子/ cm(-3)。 MOVPE样品的碳浓度是MBE生长层的两倍。 MBE生长的GaN表现出高浓度的无意识砷,浓度为1.1 x 1018原子/ cm(3),而硼则为3.0 x 10(17)17原子/ cm(3),其中硼的掺入显示出对强力的依赖性。等离子源。使用XRD,MBE材料的对称[0002]和不对称[10(1)在5条上的反射)的Q摇摆曲线FWHM大于1200 arcsec,而通过MOVPE。两种材料的光致发光显示在3.48 eV处有应变位移的浅供体结合激子和在3.27、3.18和3.09 eV处具有LO声子复制体的浅受体。从MBE样品中可以看到由于2DEG引起的排放。 MBE生长的GaN在2.82、2.99和3.42 eV处出现三个未知峰。 [参考:15]

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