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首页> 外文期刊>Physica Scripta: An International Journal for Experimental and Theoretical Physics >Temperature-dependent electrical characterization of nitrogen-doped ZnO thin film: vacuum annealing effect
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Temperature-dependent electrical characterization of nitrogen-doped ZnO thin film: vacuum annealing effect

机译：氮掺杂ZnO薄膜的温度依赖性电特性：真空退火效应

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摘要

Temperature-dependent Hall effect measurements were carried out at an N-doped ZnO thin film grown by the reactive sputtering method onto (001) Si substrate before and after being vacuum annealed at 900 degrees C. p-Type ZnO thin film was obtained with a relatively high mobility of similar to 60 cm(2) V-1 s(-1), a high carrier concentration of 2.5 x 10(17) cm(-3) and a low resistivity of 0.4 Omega cm. After vacuum annealing, the temperature dependence of electrical parameters such as mobility and carrier concentration showed highly different characteristics. Time-resolved photoluminescence (TRPL), PL and x-ray diffraction measurements (XRD) were performed after the annealing process to check whether the high-temperature annealing can remove the ZnO film on Si or not. The PL measurement shows band-to-band recombination at 360 nm and TRPL shows the exciton recombination lifetime to be 571.7 ps. The XRD measurement reveals highly preferred c-axis (0002) orientation. Activation energies were calculated using the ln sigma versus 1000 T-1 plot to be 20 meV for the as-grown and 24 and 6.8 meV after the vacuum annealing process.
机译：在900℃真空退火前后，对通过反应溅射法在（001）Si衬底上生长的N掺杂ZnO薄膜进行随温度变化的霍尔效应测量。相对较高的迁移率，类似于60 cm（2）V-1 s（-1），2.5 x 10（17）cm（-3）的高载流子浓度和0.4Ωcm的低电阻率。真空退火后，电参数（例如迁移率和载流子浓度）的温度依赖性表现出极大的差异。在退火过程之后进行时间分辨的光致发光（TRPL），PL和X射线衍射测量（XRD），以检查高温退火是否可以去除Si上的ZnO膜。 PL测量显示在360 nm处进行带间重组，TRPL显示激子复合寿命为571.7 ps。 XRD测量显示高度首选的c轴（0002）方向。使用ln sigma对1000 T-1曲线计算出活化能，初始状态下为20 meV，在真空退火工艺后为24和6.8 meV。

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