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Influence of hydrogen on electrical and optical properties of ZnO films

机译：氢对ZnO薄膜电学和光学性质的影响

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Electrical and optical properties of H doped ZnO films have been studied experimentally for different H concentrations before and after annealing, as well as theoretically by firstprinciples calculations. It is found that electrical resistivity of the H doped ZnO increases when increasing the substrate temperature in the range 25–300 8C. Carrier concentration and mobility measured by Hall method in as-grown samples are larger than those of annealed ones. The short-wavelength edge of the transmission spectrum of annealed ZnO is found to shift toward lower energies compared to as-grown samples. The band gap estimated from the measured transmission spectra of as grown ZnO increases with increasing H concentration, thus demonstrating the Burstein–Moss effect. However, it decreases in samples annealed at 300 8C showing suppression of the Burstein–Moss effect. Possible defect models explaining the reason for the suppression are discussed. The results can be explained by formation of H_2 molecules in annealed ZnO.
机译：对于退火前后的不同H浓度，已经对H掺杂ZnO薄膜的电学和光学性质进行了实验研究，并通过第一原理计算从理论上进行了研究。发现当在25–300 8C范围内增加衬底温度时，H掺杂的ZnO的电阻率会增加。用霍尔法测量的样品中的载流子浓度和迁移率大于退火后的样品。发现与退火后的样品相比，退火的ZnO的透射光谱的短波长边缘向着较低的能量移动。根据所测得的随生长的ZnO的透射光谱估计的带隙随H浓度的增加而增加，从而证明了Burstein-Moss效应。但是，在300 8C退火的样品中它降低了，显示出Burstein-Moss效应的抑制。讨论了可能的缺陷模型，解释了抑制的原因。结果可以通过在退火的ZnO中形成H_2分子来解释。

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