Amorphous thin films in the gallium-chalcogen system

Popescu, M.; Sava, F.; Lorinczi, A.; Velea, A.; Simandan, I. D.; Galca, A. C.; Matei, E.; Socol, G.; Gherendi, F.; Savastru, D.; Miclos, S.

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Amorphous thin films in the gallium-chalcogen system

机译：镓硫族元素体系中的非晶薄膜

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Thin amorphous films based on gallium-chalcogen (Ga-Ch), namely Ga2S3, Ga2Se3, Ga2Te3, and GaTe have been prepared by pulsed laser deposition (PLD). The films were characterized by X-ray diffraction, extended X-ray absorption fine structure (EXAFS), energy-dispersive X-ray spectroscopy (EDX), optical transmission spectroscopy, ellipsometry, and electrical measurements. Structural measurements showed that Ga is threefold coordinated, except the Te-based alloys were, it seems, only twofold coordinated, while the chalcogen is usually twofold coordinated. In all the compositions, layered and chain-like structures are assumed. The bandgaps range between 1.09 eV for Ga2Te3 and 2.21 eV for Ga2Se3. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

机译：已经通过脉冲激光沉积（PLD）制备了基于镓-硫属元素（Ga-Ch）的非晶薄膜，即Ga 2 S 3，Ga 2 Se 3，Ga 2 Te 3和GaTe。膜的特征在于X射线衍射，扩展X射线吸收精细结构（EXAFS），能量色散X射线光谱法（EDX），光学透射光谱法，椭圆偏振法和电学测量。结构测量表明，Ga是三重配位的，除了Te基合金似乎只有二重配位的，而硫族元素通常是二重配位的。在所有组合物中，假定为层状和链状结构。 Ga2Te3的带隙范围为1.09 eV，Ga2Se3的带隙范围为2.21 eV。（C）2016 WILEY-VCH Verlag GmbH＆Co.KGaA，魏因海姆

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《Physica status solidi, B. Basic research》 |2016年第6期|共5页
作者
Popescu, M.; Sava, F.; Lorinczi, A.; Velea, A.; Simandan, I. D.; Galca, A. C.; Matei, E.; Socol, G.; Gherendi, F.; Savastru, D.; Miclos, S.;
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正文语种 eng
中图分类固体物理学;
关键词
amorphous materials; chalcogenides; optical properties; thin films; X-ray diffraction;

机译：非晶材料;硫族化物;光学性能;薄膜; X射线衍射;

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Amorphous thin films in the gallium-chalcogen system

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